Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Sepideh Gorji Ghalamestani"'
Publikováno v:
Nanoscale. 9:3159-3168
We here investigate the growth mechanism of Sn-seeded GaSb nanowires and demonstrate how the seed particle and its dynamics at the growth interface of the nanowire determine the polarity, as well as the formation of structural defects. We use aberrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1b207b71d30d7f19e0744bbad42ace8
https://doi.org/10.1039/c6nr09477e
https://doi.org/10.1039/c6nr09477e
Autor:
Martin Hjort, James L. Webb, Johan Knutsson, Anders Mikkelsen, Rainer Timm, Sepideh Gorji Ghalamestani, Kimberly A. Dick
Publikováno v:
Nano Letters. 15:4865-4875
We present a study of InAs/InSb heterostructured nanowires by X-ray photoemission spectroscopy (XPS), scanning tunneling microscopy (STM), and in-vacuum electrical measurements. Starting with pristine nanowires covered only by the native oxide formed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::54541cd95dbed8b56647ad285f60221a
https://doi.org/10.1021/acs.nanolett.5b00282
https://doi.org/10.1021/acs.nanolett.5b00282
Autor:
Luna, Namazi, Sepideh Gorji, Ghalamestani, Sebastian, Lehmann, Reza R, Zamani, Kimberly A, Dick
Publikováno v:
Nanotechnology. 28(16)
III-V ternary nanowires are interesting due to the possibility of modulating their physical and material properties by tuning their material composition. Amongst them InAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::e1be9049040101eb4451f139c11d4b78
https://pubmed.ncbi.nlm.nih.gov/28346221
https://pubmed.ncbi.nlm.nih.gov/28346221
Publikováno v:
European Microscopy Congress 2016: Proceedings
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7717f25fb8b9efcc46217b5da6b80f16
https://doi.org/10.1002/9783527808465.emc2016.6741
https://doi.org/10.1002/9783527808465.emc2016.6741
Understanding of the electrical contact properties of semiconductor nanowire (NW) field effect transistors (FETs) plays a crucial role in employing semiconducting NWs as building blocks for future nanoelectronic devices and in the study of fundamenta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::639e01c49bdf850d3be213d49bf789ee
http://arxiv.org/abs/1605.08689
http://arxiv.org/abs/1605.08689
Autor:
Reza R. Zamani, Sebastian Lehmann, Kimberly A. Dick, Sepideh Gorji Ghalamestani, Marcus Tornberg, Erik K. Mårtensson
Publikováno v:
Nanotechnology. 27(17)
The particle-assisted epitaxial growth of antimonide-based nanowires has mainly been realized using gold as the seed material. However, the Au-seeded epitaxial growth of antimonide-based nanowires such as GaSb nanowires presents several challenges su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c50104d8597a3f8c2801a01b8733faa
https://pubmed.ncbi.nlm.nih.gov/26984940
https://pubmed.ncbi.nlm.nih.gov/26984940
Publikováno v:
Nanoscale. 8(5)
The epitaxial growth of antimonide-based nanowires has become an attractive subject due to their interesting properties required for various applications such as long-wavelength IR detectors. The studies conducted on antimonide-based nanowires indica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::84bfa1660e10493c7ec57c1aaf6c3d62
https://pubmed.ncbi.nlm.nih.gov/26763161
https://pubmed.ncbi.nlm.nih.gov/26763161
Autor:
Sofia Johansson, Mikael Egard, Lars-Erik Wernersson, Martin Berg, Mattias Borg, Sepideh Gorji Ghalamestani, Erik Lind
Publikováno v:
physica status solidi c. 9:350-353
RF and DC characterization of vertical InAs nanowire MOSFET on Si substrates are presented. Nanowire arrays are epitaxially integrated on Si substrates by use of a thin InAs buffer layer. For device fabrication, high-k HfO2 gate dielectric and wrap-g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c628eee35fa50038ce489db1292f0230
https://doi.org/10.1002/pssc.201100249
https://doi.org/10.1002/pssc.201100249
Autor:
M. E. Messing, K. Deppert, D. Jacobsson, S. Lehmann, Jessica Bolinsson, Sepideh Gorji Ghalamestani, Jonas Johansson, M. Heurlin, Lars-Erik Wernersson, Kimberley A. Dick, P. Caroff
Publikováno v:
Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd469aa374c96cd740b6ec2b1c83fe0b
https://doi.org/10.7567/ssdm.2012.c-2-1
https://doi.org/10.7567/ssdm.2012.c-2-1
Autor:
Sepideh, Gorji Ghalamestani, Martin, Ek, Bahram, Ganjipour, Claes, Thelander, Jonas, Johansson, Philippe, Caroff, Kimberly A, Dick
Publikováno v:
Nano letters. 12(9)
The Ga(x)In(1-x)Sb ternary system has many interesting material properties, such as high carrier mobilities and a tunable range of bandgaps in the infrared. Here we present the first report on the growth and compositional control of Ga(x)In(1-x)Sb ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::e9e756fde9a6c52909c4c3f20124f407
https://pubmed.ncbi.nlm.nih.gov/22924832
https://pubmed.ncbi.nlm.nih.gov/22924832