Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Seoungjin Yeom"'
Autor:
Anbae Lee, Il-Sik Jang, Sunny Hwang, Ahyoung Oh, Jongwon Park, Jihwan Park, Jaechun Cha, Hun-Sung Lee, Sungho Jo, Dong-Seok Kim, Cjay Cho, Se-Aug Jang, Sungki Park, Seung-Woo Jin, Seoungjin Yeom
Publikováno v:
2014 20th International Conference on Ion Implantation Technology (IIT).
We have investigated properties of Antimony implanted Si such as crystalline defect, dopant distribution, and sheet resistance before and after annealing using TEM, SIMS, and 4-point probe. The sheet resistance of Sb implanted Si shows 35% lower than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::855ac3a0465dd782726765fee2acc9a3
https://doi.org/10.1109/iit.2014.6940047
https://doi.org/10.1109/iit.2014.6940047
Autor:
Jaechun Cha, Seungwoo Jin, Anbae Lee, Hun-Sung Lee, Dongseok Kim, Jihwan Park, Ilsik Jang, Ahyoung Oh, Se-Aug Jang, Seoungjin Yeom, Sungki Park, Cjay Cho, Sunny Hwang, Jongwon Park, Sungho Jo
Publikováno v:
2014 20th International Conference on Ion Implantation Technology (IIT); 2014, p1-3, 3p