Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Seonno Yoon"'
Publikováno v:
Applied Surface Science. 479:803-809
The growth characteristics and electrical properties of thin films of crystalline beryllium oxide (BeO) on Si (100) substrates grown using electron beam evaporation (EBE) are described. To expand the commercial viability of BeO, a combination of EBE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d58b283dc22db01782ad690dd78dcd4
https://doi.org/10.1016/j.apsusc.2019.02.095
https://doi.org/10.1016/j.apsusc.2019.02.095
Publikováno v:
ACS Applied Energy Materials. 1:4804-4813
To improve overall electrochemical performance, we report and propose zinc cobaltite (ZnCo2O4) nanowire arrays with a simple and precisely controllable NH3 plasma treatment. The NH3 plasma treatmen...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83403e798f8c912202bfa3d615aee5e3
https://doi.org/10.1021/acsaem.8b00892
https://doi.org/10.1021/acsaem.8b00892
Autor:
Eric S. Larsen, Seung Min Lee, Seong Keun Kim, Christopher W. Bielawski, Seonno Yoon, Jungwoo Oh, Weijie Wang, Jae-Hyun Ryou, Jung Hwan Yum, Shahab Shervin, Woo Chul Lee
Publikováno v:
ACS Applied Materials & Interfaces. 9:41973-41979
We have grown a single-crystal beryllium oxide (BeO) thin film on a gallium nitride (GaN) substrate by atomic-layer deposition (ALD) for the first time. BeO has a higher thermal conductivity, bandgap energy, and dielectric constant than SiO2. As an e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::73df5de58f16fd15b9e2cd21c5be56dd
https://doi.org/10.1021/acsami.7b13487
https://doi.org/10.1021/acsami.7b13487
Publikováno v:
ACS Applied Materials & Interfaces. 9:40580-40592
Wearable textile electrodes based on π-conjugated polymers are appealing alternatives to carbon fabrics, conductive yarns, or metal wires because of their design flexibility, low cost, flexibility, and high throughput. This provides the benefits of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::75cf0e1465ffbd8dc9f0b300e2896eb3
https://doi.org/10.1021/acsami.7b10181
https://doi.org/10.1021/acsami.7b10181
Publikováno v:
Chemistry - A European Journal. 23:597-604
To achieve high energy storage on three-dimensional (3D) structures at low cost, materials with high power and long cycle life characteristics have to be developed. We synthesized ZnCo2O4/reduced graphene oxide (rGO) binary composites in commercial s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aafa485cee028a1d9cb0cdb3129459d9
https://doi.org/10.1002/chem.201602447
https://doi.org/10.1002/chem.201602447
Autor:
Do Hwan Jung, Christopher W. Bielawski, Yoonseo Jang, Seonno Yoon, Jungwoo Oh, Jung Hwan Yum, Eric S. Larsen, Seung Min Lee
Publikováno v:
Applied Surface Science. 505:144107
In this study, we demonstrated the band alignment between a BeO and AlGaN/GaN heterointerface. The bandgap of the BeO film was measured to be 8.2 ± 0.05 eV by reflection electron energy loss spectroscopy. A valence band offset of the BeO/AlGaN inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b561a27bdefd6bbd025b2de96010706
https://doi.org/10.1016/j.apsusc.2019.144107
https://doi.org/10.1016/j.apsusc.2019.144107
Publikováno v:
Advanced Functional Materials. 25:6976-6984
The simple synthesis of ultralow-density (≈2.32 mg cm−3) 3D reduced graphene oxide (rGO) aerogels that exhibit high electrical conductivity and excellent compressibility are described herein. Aerogels are synthesized using a combined hydrothermal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bc280db76b77a96408fb4d62e49cfc5
https://doi.org/10.1002/adfm.201502395
https://doi.org/10.1002/adfm.201502395
Publikováno v:
Thin Solid Films. 590:335-339
A complementary metal-oxide semiconductor (CMOS)-compatible Au-free Si/Ti/Al/Cu ohmic metallization scheme has been developed for AlGaN/GaN power transistors epitaxially grown on Si substrates. The Si/Ti/Al/Cu metallization exhibited a low specific c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d86420b9783d9e2e46d2547519f87ec9
https://doi.org/10.1016/j.tsf.2015.02.065
https://doi.org/10.1016/j.tsf.2015.02.065
Publikováno v:
physica status solidi (a). 212:804-808
Complementary metal-oxide semiconductor-compatible Ni/Ge/Al ohmic contacts to a n+-InGaAs layer exhibited a specific contact resistivity of 9.8 × 10−8 Ωcm2 at 300 and 5.1 × 10−8 Ωcm2 at 500 °C. Only 7 nm of the n+-InGaAs layer was consumed d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73d358c22ef6c10465ddc1abfd0562f7
https://doi.org/10.1002/pssa.201431713
https://doi.org/10.1002/pssa.201431713
Autor:
Christopher W. Bielawski, Eric S. Larsen, Jung Hwan Yum, Seung Min Lee, Sukwon Choi, Jae-Hyun Ryou, Jie Chen, Seonno Yoon, Sara Pouladi, Bikramjit Chatterjee, Jungwoo Oh, Weijie Wang, Shahab Shervin
Publikováno v:
Applied Physics Letters. 115:103502
We investigate the polarization modulation effect of a single-crystalline BeO layer on AlGaN/GaN high-electron-mobility transistors (HEMTs). The BeO layer with macroscopic polarization on top of the AlGaN barrier layer increases the 2-dimensional ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee91ce29535a0e0b5b1e1f640ed9d241
https://doi.org/10.1063/1.5108832
https://doi.org/10.1063/1.5108832