Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Seongpil Chang"'
Autor:
Yun Seon Do, Bo Yeon Hwang, Jinnil Choi, Yun-Hi Lee, Seongpil Chang, Byung Hyun Choi, Jong Woo Kim, Byeong Kwon Ju, Kyung Cheol Choi
Publikováno v:
Advanced Functional Materials. 24:3482-3487
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b68a2e57144846ab3111ace3e4285bf8
https://doi.org/10.1002/adfm.201304114
https://doi.org/10.1002/adfm.201304114
Autor:
Seongpil Chang, Byeong Kwon Ju
Publikováno v:
International journal of advanced smart convergence. 1:61-64
The ultraviolet and visible light responsive properties of the amorphous indium gallium zinc oxide thin film transistor have been investigated. Amorphous indium gallium zinc oxide (a-IGZO) thin film transistor operate in the enhancement mode with sat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cfb9b88ed6effa78b9ca8614356d1e4
https://doi.org/10.7236/jasc2012.1.1.12
https://doi.org/10.7236/jasc2012.1.1.12
Autor:
Sang Ii Shin, Sahn Nahm, Byeong Kwon Ju, Seung-Jun Lee, Kyung Hoon Cho, Jae Hong Kwon, Myung Ho Chung, Seongpil Chang, Ki Young Dong, Tae Yeon Oh
Publikováno v:
Journal of Nanoscience and Nanotechnology. 12:3355-3359
This paper describes the fabrication of pentacene thin-film transistors (TFTs) with an organic/inorganic hybrid gate dielectric, consisting of cross-linked poly(4-vinylphenol) (PVP) and Bi5Nb3O15. A 300-nm-thick Bi5Nb3O15 dielectric film, grown at ro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d9be622c68a350ef81dd4c7dbcd9827
https://doi.org/10.1166/jnn.2012.5640
https://doi.org/10.1166/jnn.2012.5640
Autor:
Seung Youl Kang, Byeong Kwon Ju, Tae Yeon Oh, Seongpil Chang, Kyoung Ik Cho, Shin Woo Jeong, Jin Wook Jeong
Publikováno v:
Sensors and Actuators B: Chemical. 156:657-661
We have investigated the photo-response characteristics of organic photosensors (OPS) integrated with pentacene based thin film transistors (TFTs). The fabricated device configuration is PEN/ITO/PEDOT:PSS/(poly(3-hexylethiophene)/phenyl-C61-butryic a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b1af0ee2a17a10f3d2f82e742d9020c
https://doi.org/10.1016/j.snb.2011.02.013
https://doi.org/10.1016/j.snb.2011.02.013
Publikováno v:
Microelectronic Engineering. 88:1590-1593
Effects of gate insulators for oxide TFTs have been investigated by two types of a-IGZO TFTs with high-k and low-k oxides. TFTs with low-k oxides have low on-current due to the low-capacitances of the materials. HfO"2 has been used as high-k gate ins
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a6fec353318a465f5b5495b03af20d0
https://doi.org/10.1016/j.mee.2011.01.076
https://doi.org/10.1016/j.mee.2011.01.076
Autor:
Byung Hyun Choi, Jinnil Choi, Jung Ho Park, Jae Hong Kwon, Seongpil Chang, Han Seo, Mi Jung Ji, James Jungho Pak, Byeong Kwon Ju
Publikováno v:
Thin Solid Films. 518:6264-6267
In this paper, complementary thin-film transistor (TFT) inverter is fabricated with organic–inorganic hybrid channels. By adopting p- channel pentacene and n- channel ZnO, we have fabricated a device of hybrid complementary TFT inverter by using sa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a7f02b3116cd9eba45a09115c357d3f
https://doi.org/10.1016/j.tsf.2010.03.141
https://doi.org/10.1016/j.tsf.2010.03.141
Autor:
Tae Yeon Oh, Myung Ho Chung, Sang Yeol Lee, Jung Ho Park, Jae Hong Kwon, Seongpil Chang, Hyeon Seok Bae, James Jungho Pak, Byeong Kwon Ju
Publikováno v:
Thin Solid Films. 518:6325-6329
This paper presents the post-annealing effects, caused by rapid thermal annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor's (TFT) electrical characteristics, and its contact resistance ( R C ) with thermally grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ad6440225bc9bb479591ed56c6d16e8
https://doi.org/10.1016/j.tsf.2010.02.073
https://doi.org/10.1016/j.tsf.2010.02.073
Publikováno v:
physica status solidi (a). 207:1694-1697
We demonstrate the influence of the contact resistance on the electrical properties of a-IGZO thin-film transistors (TFTs) with ZrO 2 gate insulator grown by rf-magnetron sputtering at room temperature by adopting various channel widths and lengths.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1204c1a2cbd7f5665f73387c74bedcf
https://doi.org/10.1002/pssa.200983753
https://doi.org/10.1002/pssa.200983753
Publikováno v:
Thin Solid Films. 518:1190-1193
We demonstrate an efficient CO sensor using Ga-doped ZnO (GZO) nanowires (NWs). Various GZO NWs are synthesized with Au catalysts on sapphire substrates by hot-walled pulse laser deposition. The deposition temperature of ZnO NWs was in the range of 8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03147c6636a669aff317c72dee5c3a36
https://doi.org/10.1016/j.tsf.2009.03.229
https://doi.org/10.1016/j.tsf.2009.03.229
Autor:
Byeong Kwon Ju, Tae Yeon Oh, Ki Young Dong, Seongpil Chang, Jung Ho Park, Seung-Jun Lee, Shin Woo Jung, Nam Su Kang
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 5:101-103
We fabricated 6,13-bis(triisopropylsilylethynyl)–pentacene (TIPS–pentacene) thin film transistors using a direct metal transfer method. Using different metals, such as Au and Ag ink, electrode patterns are formed from the relief region of the pol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::093409920e881ee6bc2b16cc0c4d7cd3
https://doi.org/10.1002/pssr.201004487
https://doi.org/10.1002/pssr.201004487