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pro vyhledávání: '"Seongook Jung"'
Autor:
Giuk Kim, Dong Han Ko, Taeho Kim, Sangho Lee, Minhyun Jung, Young Kyu Lee, Sehee Lim, Minyoung Jo, Taehyong Eom, Hunbeom Shin, Yeongseok Jeong, Seongook Jung, Sanghun Jeon
Publikováno v:
ACS Applied Materials & Interfaces. 15:1463-1474
Ferroelectric field-effect transistors (FeFETs) have attracted enormous attention for low-power and high-density nonvolatile memory devices in processing-in-memory (PIM). However, their small memory window (MW) and limited endurance severely degrade
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::428a7870f00f23364660704c81448bde
https://doi.org/10.1021/acsami.2c14867
https://doi.org/10.1021/acsami.2c14867
