Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Seongmo Hwang"'
Autor:
Seongmo Hwang, Grigory Simin, Asif Khan, Kamal Hussain, Fatima Asif, Shahab Mollah, Xuhong Hu, Richard Floyd
Publikováno v:
IEEE Electron Device Letters. 39:1568-1571
This letter reports an Al0.65Ga0.35N-Al0.4Ga0.6N metal–oxide–semiconductor–heterojunction–field–effect–transistor (MOSHFET) with an SiO2 gate-insulator. For this first demonstration of an AlGaN channel MOSHFET, a new doped barrier epilaye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cb2d86d589c3a327249ec82e08d98a2
https://doi.org/10.1109/led.2018.2866027
https://doi.org/10.1109/led.2018.2866027
High Electron Mobility Transistors With Al0.65Ga0.35N Channel Layers on Thick AlN/Sapphire Templates
Autor:
Asif Khan, Sakib Muhtadi, Antwon Coleman, Fatima Asif, Seongmo Hwang, Mvs Chandrashekhar, Grigory Simin
Publikováno v:
IEEE Electron Device Letters. 38:914-917
We report Al0.85 Ga0.15 N/Al0.65 Ga0.35N high-electron mobility transistors on low-defect AlN buffer layers over basal plane sapphire substrates. A new epilayer design consisting of a doped barrier layer yielded sheet resistivity values as low as $18
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9072a925eee4e4df22a5e270de4fba8b
https://doi.org/10.1109/led.2017.2701651
https://doi.org/10.1109/led.2017.2701651
Autor:
Antwon Coleman, Zane Jamal-Eddine, Yuewei Zhang, Shahadat H. Sohel, Sanyam Bajaj, Siddharth Rajan, Towhidur Razzak, Seongmo Hwang, M. Asif Khan, Wu Lu, Hao Xue
Publikováno v:
Electronics Letters. 54:1351-1353
The first report is presented on the RF operation of AlGaN channel transistor with Al-composition above 80%. The reported device is a polarisation-graded field effect transistor (PolFET) featuring an ultra-wide bandgap (UWBG) AlGaN channel with Al-co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21e0e486f61f390e6028d94333b9d1f3
https://doi.org/10.1049/el.2018.6897
https://doi.org/10.1049/el.2018.6897
Autor:
Seongmo Hwang, Towhidur Razzak, Antwon Coleman, Wu Lu, Hao Xue, Shahadat H. Sohel, Asif Khan, Siddharth Rajan
Publikováno v:
Microelectronic Engineering. 237:111495
We report RF small signal analysis of ultra-wide bandgap AlGaN channel MESFETs with Al composition of 70%. Ohmic contacts are achieved using a linearly-graded and heavily-doped AlGaN layer grown by metal organic chemical vapor deposition. The device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0188c59e41a553a4beb797f67f4c7e5b
https://doi.org/10.1016/j.mee.2020.111495
https://doi.org/10.1016/j.mee.2020.111495
Autor:
Wu Lu, Hao Xue, Zhanbo Xia, Choonghee Lee, Asif Khan, Siddharth Rajan, Seongmo Hwang, Gabriel Calderon Ortiz, Jinwoo Hwang, Towhidur Razzak, Shahadat H. Sohel
Publikováno v:
Solid-State Electronics. 164:107696
We report a gate recessed Al0.7Ga0.3N/Al0.5Ga0.5N heterostructure field effect transistor (HFET) with a graded contact cap layer grown by metal organic chemical vapor deposition (MOCVD) on AlN/Sapphire substrate. A low specific contact resistivity ρ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baed88474904a196f5476d5bd2d5307d
https://doi.org/10.1016/j.sse.2019.107696
https://doi.org/10.1016/j.sse.2019.107696
Publikováno v:
2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP).
Gallium Nitride electronics based on the AlGaN/GaN high electron mobility transistor structure is approaching intrinsic limits. Future mm-wave and THz technology requires highly efficient and linear amplifiers that can deliver high power density. Thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b193cb50af4e0fb87600d29828fc273
https://doi.org/10.1109/imws-amp.2018.8457144
https://doi.org/10.1109/imws-amp.2018.8457144
Autor:
Seongmo Hwang, Yuewei Zhang, Zane Jamal-Eddin, Sanyam Bajaj, Towhidur Razzak, Wu Lu, Hao Xue, Shahadat H. Sohel, Siddharth Rajan, Asif Khan, Antwon Coleman
Publikováno v:
DRC
High Al-composition AlGaN materials, by virtue of their ultra-wide band gap, are promising candidates for realizing high power density mm-wave transistors. However, low electron affinity in these materials make it very difficult to make ohmic contact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac6f5b6d206643cf7f8833dccd953f05
https://doi.org/10.1109/drc.2018.8442167
https://doi.org/10.1109/drc.2018.8442167
Autor:
Towhidur Razzak, Sanyam Bajaj, Xue, Hao, Seongmo Hwang, Yuewei Zhang, Jamal-Eddine, Zane, Johnson, Jared, Shahadat Hasan Sohel, Jinwoo Hwang, Khan, Asif, Lu, Wu, Siddharth Rajan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eba75f9def48b3e53c76159f2b5f4188
Publikováno v:
2017 75th Annual Device Research Conference (DRC).
We report on an Al 0 85 Ga 0.15 N-Al 0 65 Ga 0 35 N high electron mobility transistor (HEMT) on low-defect AlN buffers over basal plane sapphire substrates. A new epilayer design consisting of a doped barrier layer yielded sheet resistivity values as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d1c0cff7c51750f7811426dc0561555
https://doi.org/10.1109/drc.2017.7999444
https://doi.org/10.1109/drc.2017.7999444