Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Seongjoon Lee"'
Publikováno v:
Blucher Design Proceedings.
BIPV is a building integrated photovoltaic power generation system, which is used for building finishing materials, roof, and wall, so there is no need for separate installation space, and the usability is continuously increasing in urban areas with
Autor:
SeongJoon Lee, DongHyun Kim
Publikováno v:
Journal of the Korean institute of surface engineering. 48:149-157
MSC Co. Ldt., Incheon 21698, Korea(Received August 19, 2015 ; revised August 22, 2015 ; accepted August 26, 2015)AbstractWe investigated the effects of the fabric structure or the kinds of plated metals on the electromagneticinterference shielding ef
Publikováno v:
ICUIMC
This paper proposes an anti-collision algorithm needed in the process of recognizing data of the tags when one reader and multiple passive tags simultaneously have data communications in RFID system. QTA And 4-ary QTA which are based on the Tree algo
Publikováno v:
AINA
In RFID system, because a collision occurs while a reader attempts to identify multiple tags at the same time, the anti-collision algorithm is necessary. This paper uses the tree based algorithm expressed in the form of a B-ary tree, in which the tim
Publikováno v:
LCN
In RFID (Radio Frequency IDentification) system, the reader needs the anti collision algorithm for fast identifying all of the tags in the interrogation zone. This paper proposes the tree based Tag Prediction Algorithm using Upper Bit (TPAUB) to arbi
Publikováno v:
NCA
The RFID (radio frequency identification) is a technology that automatically identifies objects containing the electronic tags by using radio frequency. In RFID system, the reader needs the anti collision algorithm for fast identifying all of the tag
Autor:
Gucheol Jeong, Jaebuhm Suh, Ki-Soo Shin, Hoyeop Kweon, Yousung Kim, Sang-Don Lee, Seongjoon Lee, Jae-Sung Roh, Suock Jeong, Min Huh, Woncheol Cho, Hyunpil Noh
Publikováno v:
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).
The first 8F/sup 2/ stack DRAM cell with 0.08 /spl mu/m/sup 2/ size has been successfully integrated by employing a poly plug scheme for landing plug contacts and W/poly gates and Ru MIM capacitors, of which cell working has been proven under easy fu
Autor:
Hazoong Kim, Min Huh, Ysung Kim, Hyunpil Noh, Seongjoon Lee, Hee-koo Yoon, Jinwon Park, Gucheol Jeong, Dongseok Kim, Jaemin Ahn, Suock Jeong, Sang-Don Lee, Jaebuhm Suh, Woncheol Cho
Publikováno v:
2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184).
An 8F/sup 2/ stack DRAM cell, 0.115 /spl mu/m/sup 2/ in size, has been successfully integrated using a selective epitaxial plug scheme for landing plug contacts and poly metal gates and MIM COB capacitors, by which cell working has been proven under
Publikováno v:
Bioinformatics; 5/1/2015, Vol. 31 Issue 9, p1508-1514, 7p
Publikováno v:
2013 International Conference on ICT Convergence (ICTC); 2013, p1146-1150, 5p