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pro vyhledávání: '"Seongjae Moon"'
Quasi-direct Cu–Si3N4 bonding using multi-layered active metal deposition for power-module substrate
Autor:
Hiroaki Tatsumi, Seongjae Moon, Makoto Takahashi, Takahiro Kozawa, Eiki Tsushima, Hiroshi Nishikawa
Publikováno v:
Materials & Design, Vol 238, Iss , Pp 112637- (2024)
The advancement of power modules demands more reliable insulating circuit substrates. Traditional substrates, comprising Cu and Si3N4, are produced using active metal brazing (AMB). However, AMB substrates have reliability concerns owing to electroch
Externí odkaz:
https://doaj.org/article/d029dab47bb749a3a8e5ea4cf40c44bd
Publikováno v:
International Journal of Highway Engineering. 24:103-108
Autor:
Hyo-Jong Lee, Seong-Jin Kim, Sang-Hyeok Kim, Hyun Park, Han-Kyun Shin, Seongjae Moon, Cheol-Ho Heo
Publikováno v:
Korean Journal of Metals and Materials. 59:233-238
To manufacture finer solder bumps, the SR and DFR patterns were filled using a Sn electroplating process instead of the microball process currently used in BGA technology, and the solder bump shape was fabricated through a reflow process. The microst
Publikováno v:
Journal of The Electrochemical Society. 163:D49-D53
Autor:
Sung-Joo Kim, Chanmin Jo, Sang Min Lee, Jaemin Shin, Baekkyu Choi, Seongjae Moon, Woonghwan Ryu
Publikováno v:
2014 IEEE 64th Electronic Components and Technology Conference (ECTC).
Recent fast-evolving mobile system demands high bandwidth and low power consumption, necessitating extension of LPDDR3 beyond 1.6 Gbps. This demand, however, brings significant technical challenges from the perspective of signal and power integrity.