Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Seonghwan Seo"'
Publikováno v:
Advanced Science, Vol 10, Iss 8, Pp n/a-n/a (2023)
Abstract Deep generative models are attracting attention as a smart molecular design strategy. However, previous models often render molecules with low synthesizability, hindering their real‐world applications. Here, a novel graph‐based condition
Externí odkaz:
https://doaj.org/article/a49e26893ac2462ebc0eef0a6e9bcf00
Publikováno v:
Advanced Science. 10
Deep generative models are attracting attention as a smart molecular design strategy. However, previous models often render molecules with low synthesizability, hindering their real-world applications. Here, a novel graph-based conditional generative
Publikováno v:
Chemical Science
Drug-likeness prediction is important for the virtual screening of drug candidates. It is challenging because the drug-likeness is presumably associated with the whole set of necessary properties to pass through clinical trials, and thus no definite
A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface
Autor:
Kye-Hyun Kyung, Chulbum Kim, Hyung-Gon Kim, Pansuk Kwak, Jeon Hongsoo, Du-Heon Song, Jae-Yong Jeong, Kwang-Il Park, In-Youl Lee, Jinman Han, Jaewoo Lim, Young-Hyun Jun, Tae-Sung Lee, Young-Ho Lim, Yong-Sik Yim, Jinho Ryu, Doo-Seop Lee, Chang-hyun Cho, Bo-Keun Kim, Woopyo Jeong, Seonghwan Seo, Seong-Soon Cho
Publikováno v:
IEEE Journal of Solid-State Circuits. 47:981-989
A monolithic 64 Gb MLC NAND flash based on 21 nm process technology has been developed. The device consists of 4-plane arrays and provides page size of up to 32 KB. It also features a newly developed asynchronous DDR interface that can support up to
Autor:
Chulbum Kim, Jinho Ryu, Taesung Lee, Hyeonggon Kim, Jeawoo Lim, Jaeyong Jeong, Seonghwan Seo, Hongsoo Jeon, Bokeun Kim, InYoul Lee, DooSeop Lee, PanSuk Kwak, Seongsoon Cho, Yongsik Yim, Changhyun Cho, Woopyo Jeong, Jin-Man Han, Dooheon Song, Kyehyun Kyung, Young-Ho Lim
Publikováno v:
2011 Symposium on VLSI Circuits (VLSIC); 2011, p196-197, 2p