Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Seonghwan Hong"'
Autor:
Byung Ha Kang, Su Jin Jung, Seonghwan Hong, I. Sak Lee, Seongin Hong, Sunkook Kim, Hyun Jae Kim
Publikováno v:
Journal of Information Display, Vol 21, Iss 2, Pp 123-130 (2020)
Nitrocellulose is proposed as a passivation layer for multilayer molybdenum disulfide (MoS2) thin-film transistors (TFTs) to improve the stability of the devices. After the devised passivation layer was stacked, the threshold voltage shift of the nit
Externí odkaz:
https://doaj.org/article/fd7986ca90aa43d2aa6810a1a381dd40
Autor:
Seongin Hong, Sujin Jung, Sunkook Kim, Hyun Jae Kim, Seonghwan Hong, I. Sak Lee, Byung Ha Kang
Publikováno v:
Journal of Information Display, Vol 21, Iss 2, Pp 123-130 (2020)
Nitrocellulose is proposed as a passivation layer for multilayer molybdenum disulfide (MoS2) thin-film transistors (TFTs) to improve the stability of the devices. After the devised passivation layer was stacked, the threshold voltage shift of the nit
Publikováno v:
IEEE Electron Device Letters. 40:1108-1111
Recoverable residual image characteristics for n- and p-type low-temperature polycrystalline silicon (LTPS) thin-film transistor (TFT)-based organic light-emitting diode (OLED) displays using polyimide substrates were investigated. Unlike OLED displa
Publikováno v:
SID Symposium Digest of Technical Papers. 50:105-108
Autor:
Jae Won Na, Hyung Tae Kim, I. Sak Lee, Byung Ha Kang, Jusung Chung, Seonghwan Hong, Hyun Jae Kim
Publikováno v:
ACS applied materialsinterfaces. 12(35)
A simple fabrication method for homojunction-structured Al-doped indium-tin oxide (ITO) thin-film transistors (TFTs) using an electrohydrodynamic (EHD) jet-printed Al2O3 passivation layer with specific line (WAl2O3) is proposed. After EHD jet printin
Publikováno v:
ACS Applied Materials & Interfaces. 10:37207-37215
A facile fabrication of polymer/metal-oxide hybrid semiconductors is introduced to overcome the intrinsically brittle nature of inorganic metal-oxide semiconductors. The fabrication of the hybrid semiconductors was enabled by plasma polymerization of
Publikováno v:
ECS Transactions. 86:95-104
Publikováno v:
ACS Applied Materials & Interfaces. 9:13278-13285
In this research, nitrocellulose is proposed as a new material for the passivation layers of amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs). The a-IGZO TFTs with nitrocellulose passivation layers (NC-PVLs) demonstrate improve
Publikováno v:
Journal of Information Display. 17:93-101
In this review, the multi-stacked active-layer (MSAL) structures for the solution-processed amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) are summarized to improve their electric...
Publikováno v:
RSC Advances. 6:64441-64445
The performance and stability of flexible carbon nanofiber (CNF) electrodes were investigated for a lead zirconate titanate (PZT) nanogenerator. A comparative study was carried out with indium tin oxide coated polyethylene 2,6-naphthalate (ITOP) elec