Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Seonghoon Woo"'
Autor:
Seonghoon Woo, Kyung Mee Song, Xichao Zhang, Yan Zhou, Motohiko Ezawa, Xiaoxi Liu, S. Finizio, J. Raabe, Nyun Jong Lee, Sang-Il Kim, Seung-Young Park, Younghak Kim, Jae-Young Kim, Dongjoon Lee, OukJae Lee, Jun Woo Choi, Byoung-Chul Min, Hyun Cheol Koo, Joonyeon Chang
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-8 (2018)
Non-zero topological charge prevents the straight motion of ferromagnetic skyrmions and hinders their applications. Here, the authors report the stabilization and current-driven dynamics of skyrmions in GdFeCo films in which the ferrimagnetic skyrmio
Externí odkaz:
https://doaj.org/article/158a688ac5b2402b93cd6d0ce1644b24
Autor:
Seonghoon Woo, Kyung Mee Song, Hee-Sung Han, Min-Seung Jung, Mi-Young Im, Ki-Suk Lee, Kun Soo Song, Peter Fischer, Jung-Il Hong, Jun Woo Choi, Byoung-Chul Min, Hyun Cheol Koo, Joonyeon Chang
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-8 (2017)
Magnetic skyrmions are potentially suitable for future spintronic devices, but their dynamical behaviour in real space remains elusive. Here, Wooet al. report nanosecond-dynamics of a 100nm-size magnetic skyrmion triggered by current-induced spin-orb
Externí odkaz:
https://doaj.org/article/4bef8c5916ed4c74867ac1b2519ae660
Autor:
Jing Xia, Simone Finizio, Jaeseung Jeong, Kwangsu Kim, Hyunsu Ju, Kyung Mee Song, Sun Kyung Cha, Wang Kang, Xichao Zhang, Weisheng Zhao, Jörg Raabe, Seonghoon Woo, Tae Eon Park, Joonyeon Chang, Yan Zhou, Biao Pan
Publikováno v:
Nature Electronics. 3:148-155
Magnetic skyrmions are topologically protected spin textures that have nanoscale dimensions and can be manipulated by an electric current. These properties make the structures potential information carriers in data storage, processing and transmissio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae38bfe480df6dd3dcf8950e074bcb05
https://doi.org/10.1038/s41928-020-0385-0
https://doi.org/10.1038/s41928-020-0385-0
Autor:
Xiuzhen Yu, Fehmi S. Yasin, Licong Peng, Naoya Kanazawa, Yoshinori Tokura, Seonghoon Woo, Tae Eon Park
Publikováno v:
Microscopy and Microanalysis. 26:614-616
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db89f7091e50173ae215b480e0c6cbb5
https://doi.org/10.1017/s1431927620015299
https://doi.org/10.1017/s1431927620015299
Autor:
Licong Peng, Fehmi S. Yasin, Sung Jong Kim, Takuro Nagai, Seonghoon Woo, Tae Eon Park, Xichao Zhang, Xiuzhen Yu, Koji Kimoto
The advent of ferromagnetism in two-dimensional (2D) van der Waals (vdW) magnets has stimulated high interest in exploring topological magnetic textures, such as skyrmions for use in future skyrmion-based spintronic devices. To engineer skyrmions in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3bf9cc5132d69bb0a6a37045876cca1e
http://arxiv.org/abs/2105.00468
http://arxiv.org/abs/2105.00468
In this chapter, we introduce the concept of magnetic skyrmions in ferrimagnetic materials. We also review and discuss recent findings and advances in the field of ferrimagnetic skyrmions. In particular, we focus on the theoretical and experimental w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27282fb1f322e920ed9dc82037476145
https://doi.org/10.1016/b978-0-12-820815-1.00002-x
https://doi.org/10.1016/b978-0-12-820815-1.00002-x
Autor:
Gabriele Bonanno, Felix Büttner, Mario Carpentieri, Xing Chen, Oksana Chubykalo-Fesenko, Giuseppina D’Aguì, Konstantin Denisov, Motohiko Ezawa, Peter Fischer, Hans J. Hug, Wang Kang, Mathias Kläui, William Legrand, Na Lei, Andrey O. Leonov, Sai Li, Kai Litzius, Xiaoxi Liu, Jacques Miltat, Catherine Pappas, Stanislas Rohart, Sujoy Roy, Igor Rozhansky, Luis Sánchez-Tejerina, Laichuan Shen, André Thiaville, Riccardo Tomasello, Oleg A. Tretiakov, Seonghoon Woo, Jing Xia, Xichao Zhang, Xueying Zhang, Weisheng Zhao, Yan Zhou, Daoqian Zhu, Roberto Zivieri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c27a68202398144d6722652f58518886
https://doi.org/10.1016/b978-0-12-820815-1.09992-2
https://doi.org/10.1016/b978-0-12-820815-1.09992-2
Demonstration of narrow switching distributions in STTMRAM arrays for LLC applications at 1x nm node
Autor:
C. P. D'Emic, S. L. Brown, E. R. J. Edwards, Gen P. Lauer, Janusz J. Nowak, Jung-hyeon Kim, Hyung-Suk Jung, Thitima Suwannasiri, Guohan Hu, Daniel C. Worledge, Matthias Georg Gottwald, Seonghoon Woo, Pouya Hashemi, Jonathan Z. Sun, Philip L. Trouilloud
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We demonstrate spin-transfer torque magnetoresistive random access memory (STT-MRAM) arrays achieving 2.8e-10 write error rate (WER) performance at 3 ns write duration at a magnetic tunnel junction (MTJ) diameter of 40 nm. The bit-to-bit distribution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56b426f67520001c3df4a08e7e4a1c51
https://doi.org/10.1109/iedm13553.2020.9371985
https://doi.org/10.1109/iedm13553.2020.9371985
Autor:
Joonyeon Chang, Dongwon Choi, Ji-Won Son, Seonghoon Woo, Ki Young Lee, Sujin Jo, Jung Hoon Park, Geoffrey S. D. Beach, Ho-Il Ji, Aik Jun Tan, Mantao Huang
Publikováno v:
ACS
© 2020 American Chemical Society. Voltage control of interfacial magnetism has been greatly highlighted in spintronics research for many years, as it might enable ultralow power technologies. Among a few suggested approaches, magneto-ionic control o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::43afe1bfba9a5bf979b434b1112e5556
https://hdl.handle.net/1721.1/127206
https://hdl.handle.net/1721.1/127206
Autor:
Jung-hyeon Kim, Nathan P. Marchack, Seonghoon Woo, C. P. D'Emic, R. P. Robertazzi, Thitima Suwannasiri, Philip L. Trouilloud, Matthias Georg Gottwald, Kothandaraman Chandrasekharan, Houssameddine Dimitri, S. L. Brown, D.I. Kim, Gen P. Lauer, B. Doris, Qing He, Janusz J. Nowak, M. Reuter, Hyae-ryoung Lee, Pouya Hashemi, Daniel C. Worledge, Guohan Hu, Jonathan Z. Sun
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
We report for the first time reliable 2 ns switching of spin-transfer torque magneto-resistive random access memory (STT-MRAM) devices by demonstrating 100% write-error-rate (WER) yield at 1e-6 write-error floor of 254 devices with tight distribution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c43b40d632495c6eb788e9abf23377f
https://doi.org/10.1109/iedm19573.2019.8993604
https://doi.org/10.1109/iedm19573.2019.8993604