Zobrazeno 1 - 10 of 131 pro vyhledávání: '"Seonghearn Lee"'
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Akademický článek
Analysis of Kink Effect in Short-Channel Floating Body PD-SOI MOSFETs
Autor: Kyeongjun Kim, Seonghearn Lee
Publikováno v: IEEE Journal of the Electron Devices Society, Vol 11, Pp 354-358 (2023)
The origin of a greater decrease in kink drain voltage $V_{kink}$ in floating body PD-SOI MOSFETs with gate lengths shorter than $0.35 ~\mu m$ is newly revealed. The $V_{kink}$ formula as a function of the internal body voltage and $I_{DS}$ is derive
Externí odkaz: https://doaj.org/article/40d021386a224f9796e37a026a18f419
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4
Gate Voltage-Dependence of Junction Capacitance in MOSFETs
Autor: Jinwook Kuk, Seonghearn Lee
Publikováno v: IEEE Transactions on Electron Devices. 68:5315-5318
The gate–bulk/body voltage ${V}_{\text {gb}}$ -dependent effect of the source or drain–bulk/body junction capacitance ${C}_{j}$ that is originated from the variation in the gate-edge sidewall junction area due to the modulation of the channel dep
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4e8c417334e1a17892be01395f55eda9
https://doi.org/10.1109/ted.2021.3101999
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8
Analysis of RF Inductive Effect in S-Parameters of Body Contact PD-SOI MOSFETs
Autor: Seonghearn Lee, Kiahn Lee
Publikováno v: IEEE Transactions on Electron Devices. 67:4054-4059
The anomalous RF inductive effect in which ${S}_{{21}}$ - and ${S}_{{22}}$ -parameters rotate clockwise in the lower and upper half-circles, respectively, with increasing the frequency at the high ${V}_{\text {DS}}$ region has been investigated in bo
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6afc5acd45fd0be1dafe103bfe5b4c75
https://doi.org/10.1109/ted.2020.3013564
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