Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Seong-kuk Lee"'
Autor:
Seong Kuk Lee, Joo-Hyung Lee, Hee Ae Lee, Sung Chul Yi, Hyo Sang Kang, Jae Hwa Park, Won Il Park, Seunghoon Lee
Publikováno v:
Electronic Materials Letters. 17:43-53
We investigated the effects of different thermal treatment conditions on the surface and internal residual strains of bulk GaN grown by hydride vapor phase epitaxy (HVPE). Thermal annealing was performed at 700–1000 °C for 1–5 h in nitrogen atmo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb9cad51ea0e18ffb0fab8867b2e288a
https://doi.org/10.1007/s13391-020-00252-x
https://doi.org/10.1007/s13391-020-00252-x
Autor:
Bong Geun Choi, Cheol Woo Park, Kwang Bo Shim, Seong Kuk Lee, Dong Keun Oh, Yoon Pyo Hong, Jae Hwa Park
Publikováno v:
Journal of the Korean Crystal Growth and Crystal Technology. 24:237-241
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc0d1799f3096ce12143945fea8a127b
https://doi.org/10.6111/jkcgct.2014.24.6.237
https://doi.org/10.6111/jkcgct.2014.24.6.237
Autor:
Dong Keun Oh, Seong Kuk Lee, Hyun Mi Kim, Cheol Woo Park, Yoon Pyo Hong, Kwang Bo Shim, Jae Hwa Park, Bong Geun Choi
Publikováno v:
Journal of the Korean Crystal Growth and Crystal Technology. 24:196-201
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea*Unimo Photron Co., Ltd., Seoul 137-820, Korea(Received October 2, 2014)(Revised October 14, 2014)(Accepted October 17, 2014)Abstract We investigated defects and s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55f67545a3ac4ed26e7b77a5348fe2f3
https://doi.org/10.6111/jkcgct.2014.24.5.196
https://doi.org/10.6111/jkcgct.2014.24.5.196
Autor:
Cheol Woo Park, Hyun Mi Kim, Dong Keun Oh, Seong Kuk Lee, Bong Geun Choi, Yoon Pyo Hong, Jae Hwa Park, Kwang Bo Shim
Publikováno v:
Journal of the Korean Crystal Growth and Crystal Technology. 24:135-139
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea*UNIMO Photron, Seoul 137-063 Korea(Received June 10, 2014)(Revised July 7, 2014)(Accepted July 18, 2014)Abstract The hydride vapor phase epitaxy (HVPE) grown GaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0344aca64939cc91f6982eee0f5e19b4
https://doi.org/10.6111/jkcgct.2014.24.4.135
https://doi.org/10.6111/jkcgct.2014.24.4.135
Publikováno v:
Journal of Materials Processing Technology. 213:143-152
An experimental method is suggested to obtain the effective arc radii for various welding conditions in vacuum gas hollow tungsten arc welding. The irradiance distribution of welding arc next above the anode workpiece is obtained by applying Abel inv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c081f040506b1bd1fa932c853719d00e
https://doi.org/10.1016/j.jmatprotec.2012.09.024
https://doi.org/10.1016/j.jmatprotec.2012.09.024
Autor:
Bong Geun Choi, So Yeon Kim, Seong Kuk Lee, Sin-Yeong Bang, Dong Keun Oh, Suk Hyun Kang, Kwang Bo Shim, Jin Hyun Chung, Sae Am Kim, Kyoung Hun Kim
Publikováno v:
Journal of the Korean Crystal Growth and Crystal Technology. 22:261-264
In this paper, we investigated characteristics of etching induced surface morphology variation by wet etching of GaN epilayer were grown on sapphire (0001) substrate by hydride vapor phase epitaxy (HVPE). As a results of scanning electron microscope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60f658303f62ddd37164b6d0ce8379a4
https://doi.org/10.6111/jkcgct.2012.22.6.261
https://doi.org/10.6111/jkcgct.2012.22.6.261
Autor:
Dong Keun Oh, Bong Geun Choi, Sin Young Bang, Prachuporn Maneeratanasarn, Seong Kuk Lee, Jin Hyun Chung, Jaime A. Freitas, Kwang Bo Shim
Publikováno v:
Journal of Crystal Growth. 356:22-25
Boule of GaN crystal was grown with 50 mm diameter and 3 mm thickness by hydride vapor phase epitaxy and cut using a wire saw to produce freestanding wafers. These were, mechanically polished with diamond slurry and followed with chemical mechanical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e833db8d403b05e0bb1ab062e059655
https://doi.org/10.1016/j.jcrysgro.2012.06.056
https://doi.org/10.1016/j.jcrysgro.2012.06.056
Autor:
Junho Chung, Kwang-Bo Shim, Bong-Geun Choi, Jong-Won Eun, Seong-Kuk Lee, Dong-Keun Oh, Jin-Hyun Chung, Sin-Young Bang
Publikováno v:
Journal of the Korean Crystal Growth and Crystal Technology. 20:164-167
Bulk GaN single crystal with 1.5 mm thickness was successfully grown by hydride vapor phase epitaxy (HVPE) technique. Free-standing GaN substrates of mm size were fabricate after lift-off of sapphire substrate and their optical properties were charac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e15eb841c75ce6b1334e3bf0d2dd507
https://doi.org/10.6111/jkcgct.2010.20.4.164
https://doi.org/10.6111/jkcgct.2010.20.4.164
Publikováno v:
Japanese Journal of Applied Physics. 41:L317-L319
The dependence of the etch rate and surface roughness on the polarity of undoped GaN was investigated. A freestanding GaN substrate was etched using Cl2-based inductively coupled plasma-reactive ion etching (ICP-RIE). The etch rates of the N-face and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1ee8c11e39eca12537fb6ae1ea2ca3d
https://doi.org/10.1143/jjap.41.l317
https://doi.org/10.1143/jjap.41.l317
Publikováno v:
SPIE Proceedings.
For decades, precisely machining silicon has been critical for the success of the semiconductor industry. This has traditionally been done through wet chemical etching, but in the pursuit of integrating photonics devices on a single chip, other techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be377aaafe5bb66128e724aac13edb8a
https://doi.org/10.1117/12.446542
https://doi.org/10.1117/12.446542