Výsledky vyhledávání - "Seong-Kwang Kim"

Akademický článek

Development of a Nurse Turnover Prediction Model in Korea Using Machine Learning

Autor: Seong-Kwang Kim, Eun-Joo Kim, Hye-Kyeong Kim, Sung-Sook Song, Bit-Na Park, Kyoung-Won Jo

Publikováno v: Healthcare, Vol 11, Iss 11, p 1583 (2023)

Nurse turnover is a critical issue in Korea, as it affects the quality of patient care and increases the financial burden on healthcare systems. To address this problem, this study aimed to develop and evaluate a machine learning-based prediction mod

Externí odkaz: https://doaj.org/article/7e30d17af1c64ee9ba5b6032414172c9

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Akademický článek

Heterogeneous Integration Toward a Monolithic 3-D Chip Enabled by III–V and Ge Materials

Autor: Sang-Hyeon Kim, Seong-Kwang Kim, Jae-Phil Shim, Dae-Myeong Geum, Gunwu Ju, Han-Sung Kim, Hee-Jeong Lim, Hyeong-Rak Lim, Jae-Hoon Han, Subin Lee, Ho-Sung Kim, Pavlo Bidenko, Chang-Mo Kang, Dong-Seon Lee, Jin-Dong Song, Won Jun Choi, Hyung-Jun Kim

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 6, Pp 579-587 (2018)

Monolithic 3-D integration has emerged as a promising technological solution for traditional transistor scaling limitations and interconnection bottleneck. The challenge we must overcome is a processing temperature limit for top side devices in order

Externí odkaz: https://doaj.org/article/20293a3a75a24531bcbca730df0a2068

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Akademický článek

Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics

Autor: Bong Ho Kim, Song‐Hyeon Kuk, Seong Kwang Kim, Joon Pyo Kim, Yoon‐Je Suh, Jaeyong Jeong, Chan Jik Lee, Dae‐Myeong Geum, Young Joon Yoon, Sang Hyeon Kim

Publikováno v: Advanced Electronic Materials, Vol 10, Iss 1, Pp n/a-n/a (2024)

Abstract The study demonstrates HfZrOx (HZO)‐based Si ferroelectric field‐effect transistors (FeFETs) with a low operating voltage (1.5 V) and immediate read‐after‐write operation (100 ns) via HZO thickness scaling, electron‐beam‐irradiat

Externí odkaz: https://doaj.org/article/f9b6aae35a3049e9b8b5aadcc75f6987

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Akademický článek

High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb

Autor: Sang-Hyeon Kim, Ilpyo Roh, Jae-Hoon Han, Dae-Myeong Geum, Seong Kwang Kim, Soo Seok Kang, Hang-Kyu Kang, Woo Chul Lee, Seong Keun Kim, Do Kyung Hwang, Yun Heub Song, Jin Dong Song

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 9, Pp 42-48 (2021)

In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al0.95Ga0.05Sb barrier, which eliminates t

Externí odkaz: https://doaj.org/article/e14f70b92ca14adebb389839bfcd79c5

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