Capacitance response characteristics of hydrogen sensor with tantalum oxide dielectric layer

Autor: Seong-Jeen Kim

Publikováno v: International Journal of Hydrogen Energy. 43:19810-19815

Sensors with silicon substrates are limited in their application at higher temperatures than 250 °C due to the small band gap energy in silicon. In this study, a hydrogen gas sensor with metal-oxide-semiconductor (MOS) structure capable of operating

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bec0d5329f84bcd21123040c1025601e
https://doi.org/10.1016/j.ijhydene.2018.08.187

Effect of Palladium Electrode Patterns on Hydrogen Response Characteristics from a Sensor Based on Ta2O5 Film on SiC at High Temperatures

Autor: Seong-Jeen Kim, Kyeong-Keun Choi

Publikováno v: Sensors (Basel, Switzerland)
Sensors
Volume 19
Issue 24

Our study aims to fabricate a hydrogen sensor based on thermal stability analysis of Ta2O5 film, and to determine the effect of Pd electrodes on the hydrogen sensor at high temperatures. First, in order to ensure high-temperature stability of silicon

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a9a8cb471258d56daca984f49ca2cdf
https://doi.org/10.3390/s19245478

Capacitive-type Hydrogen Gas Sensor Using Ta2O5as Sensitive Layer

Autor: Seong-Jeen Kim, Je-Hoon Choi

Publikováno v: Journal of the Korean Institute of Electrical and Electronic Material Engineers. 26:882-887

We investigated a SiC-based hydrogen gas sensor with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications. The sensor was fabricated by Pd//SiC structure, and a thin tantalum oxide () l

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::49eeba7176e2e28f875cec64198315c8
https://doi.org/10.4313/jkem.2013.26.12.882

Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications

Autor: Sung-Jae Joo, Je-Hoon Choi, Min-Soo Jung, Seong-Jeen Kim, Sangchoel Kim

Publikováno v: Sensors, Vol 13, Iss 10, Pp 13575-13583 (2013)
SENSORS(13): 10
Sensors (Basel, Switzerland)
Sensors; Volume 13; Issue 10; Pages: 13575-13583

We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this wor

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f218b11fefc04d32321cbd450addd6df
http://www.mdpi.com/1424-8220/13/10/13575

The Effect on the Gas Selectivity of CNT-Based Gas Sensors by Binder in SWNT/Silane Sol Solution

Autor: Seong Jeen Kim

Publikováno v: IEEE Sensors Journal. 10:173-177

We investigated that CNT-based gas sensors could be sensitized selectively by changing binders contained in SWNTs/silane sol solution. To do this, we fabricated CNT-based gas sensors that consisted of a SWNTs/silane hybrid thin film deposited by mult

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1cfad3a2652d7305dc6ed8a98dac8b6c
https://doi.org/10.1109/jsen.2009.2035218