Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Seong-Ik Cho"'
Publikováno v:
Journal of Astronomy and Space Sciences, Vol 8, Iss 1, Pp 115-123 (1991)
Automatching algorithm is suitable for cross-correlation, which showed correlation surface about maximal correlation coefficient. The size of the window area must be determined empirically, whereas window size generally chosen as a compromise between
Externí odkaz:
https://doaj.org/article/ddab5d05ace348988fc50c60d6d48692
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 20:459-467
As the standard complementary metal-oxide-semiconductor (CMOS) integrated circuit (IC) generates a leakage current due to ionizing radiation reacting with silicon in a radiological environment, radiation hardening of CMOS devices is being actively in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc80dcc3fd575e25cfb76ec1380becfe
https://doi.org/10.1109/tdmr.2020.2994390
https://doi.org/10.1109/tdmr.2020.2994390
Publikováno v:
Electronics, Vol 10, Iss 887, p 887 (2021)
Electronics
Volume 10
Issue 8
Electronics
Volume 10
Issue 8
In the present study, the layout structure of an n-MOSFET, which is vulnerable to radiation, was designed in a different way to enhance its tolerance to radiation. Radiation damage assessment was conducted using modeling and simulation (M&
S)
S)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::03795ee66f40ca336b0c4518c3d8f497
https://www.mdpi.com/2079-9292/10/8/887
https://www.mdpi.com/2079-9292/10/8/887
Publikováno v:
Microelectronic Engineering. 200:45-50
The n-type metal-oxide-semiconductor field-effect transistor (n-MOSFET) produced in the widely used CMOS bulk process takes radiation damage by the total ionizing dose (TID) effects in radiation environments, so the radiation-tolerant properties of s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d0633dfcef37bf5a6ff9ea02f318417
https://doi.org/10.1016/j.mee.2018.08.007
https://doi.org/10.1016/j.mee.2018.08.007
Publikováno v:
The Transactions of The Korean Institute of Electrical Engineers. 66:540-544
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bdfbe57ee3290f477fa918574429eaf
https://doi.org/10.5370/kiee.2017.66.3.540
https://doi.org/10.5370/kiee.2017.66.3.540
Publikováno v:
Journal of the Korea Institute of Information and Communication Engineering. 20:1927-1934
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5298f76e1b7bef6fb215cdf16654ad7
https://doi.org/10.6109/jkiice.2016.20.10.1927
https://doi.org/10.6109/jkiice.2016.20.10.1927
Publikováno v:
Journal of IKEEE. 19:87-93
In this paper, a , 87dB SNR, Low power 3rd order Sigma-Delta Modulator with Op-amp sharing is proposed. Conventional architecture with analog path and digital path is improved by adding a delayed feed -forward path for disadvantages that coefficient
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba8cc26dfe43684836f2376723a93c80
https://doi.org/10.7471/ikeee.2015.19.1.087
https://doi.org/10.7471/ikeee.2015.19.1.087
Publikováno v:
Journal of IKEEE. 18:192-197
In this paper, 3 SDM with FDPA(Feedback Delay Pass Addition) technique to improve the input range is proposed. Conventional architecture with 3 transfer function is just made as adding a digital delay path in 2 SDM architecture. But the input range i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45578bf4b31f2100e5fac39ce3ea7332
https://doi.org/10.7471/ikeee.2014.18.2.192
https://doi.org/10.7471/ikeee.2014.18.2.192
Publikováno v:
The Transactions of The Korean Institute of Electrical Engineers. 63:490-494
In this paper, a design of high-speed power-off circuit and analysis. The incidence of high-dose transient radiation into the silicon-based semiconductor element induces the photocurrent due to the creation of electron-hole pairs, which causes the up
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e8c1e415e9cc3524d781170c244d476
https://doi.org/10.5370/kiee.2014.63.4.490
https://doi.org/10.5370/kiee.2014.63.4.490
Publikováno v:
Solid-State Electronics. 162:107630
This paper deals with a radiation hardening technology for the logic in a commercial CMOS bulk process and the possibility to develop a radiation-hardened (RH) logic standard cell to design RH-integrated circuits (ICs) for a total ionizing dose (TID)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44422a8927f0458de7630bbe74b8e0c1
https://doi.org/10.1016/j.sse.2019.107630
https://doi.org/10.1016/j.sse.2019.107630