Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Seong-Hwee Cheong"'
Publikováno v:
Metals and Materials International. 12:189-192
15 nm-Co/15 nm-Ni/p−Si (100) was thermally annealed using rapid thermal annealing for 40 s at 700∼1100°C. The annealed bilayer structure developed into the composite CoNiSix and the resulting changes in sheet resistance, microstructure, and comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e462bb9ff23a1f69f4e9b1fb59fa270f
https://doi.org/10.1007/bf03027477
https://doi.org/10.1007/bf03027477
Autor:
Hyun-Su Kim, U-In Chung, Byung Il Ryu, Sung-Tae Kim, Seong Hwee Cheong, Gil Heyun Choi, Sug-Woo Jung, Jong-Ho Yun, Eun Ji Jung, Joo Tae Moon, Byung Hee Kim
Publikováno v:
Microelectronic Engineering. 82:449-453
The nickel/cobalt bilayer salicidation technology which enables an agglomeration-free silicidation even on narrow-line poly gate was investigated and described in detail. Si/Ni/Co and Si/Co/Ni bilayer stack were evaluated and the effect of thickness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14eee12ab93edf541e84e9301da4b27a
https://doi.org/10.1016/j.mee.2005.07.041
https://doi.org/10.1016/j.mee.2005.07.041
Autor:
Ilsub Chung, Donggun Park, Suk Kang Sung, Jong Jin Lee, Young-Joon Ahn, Se-Hoon Lee, Byung-Il Ryu, Jeong-Dong Choe, Seong Hwee Cheong, Choong-ho Lee, Eun Suk Cho, Seung Beom Kim, Byung Yong Choi, Kyuncharn Park
Publikováno v:
2006 64th Device Research Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d3820ae444ddc26757ac22a3d3f872c
https://doi.org/10.1109/drc.2006.305179
https://doi.org/10.1109/drc.2006.305179
Autor:
Donggun Park, Dong Kak Lee, Seong Hwee Cheong, Eun Suk Cho, Dong-uk Choi, Seung Beom Kim, Young-Joon Ahn, Suk-Kang Sung, Byung-Il Ryu, Choong-ho Lee, Jeong-Dong Choe, Byung Yong Choi, Se-Hoon Lee, Jong Jin Lee
Publikováno v:
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..
This paper presents the trap layer engineered body-tied FinFET device for MLC NAND flash application. The device design parameters for high density NAND flash memory have been considered, and the advantages of FinFET structure and high-k blocking die
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a1d3f6cf7fd18156d0188f895887caf
https://doi.org/10.1109/vlsit.2006.1705230
https://doi.org/10.1109/vlsit.2006.1705230
Autor:
Joo-Tae Moon, Jong-Ho Yun, Hyun-Su Kim, Gil-heyun Choi, U-In Chung, Sung-tae Kim, Woong-Hee Sohn, Sug-Woo Jung, Kwang-jin Moon, Seong-hwee Cheong, Se-Hoon Kim, Nam-Jin Bae
Publikováno v:
Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa1697e59ec8e4283367509c7364a7bb
https://doi.org/10.7567/ssdm.2004.p3-7
https://doi.org/10.7567/ssdm.2004.p3-7
Autor:
Sug-Woo Jung, Hyun-Su Kim, Eun-Ji Jung, Seong-Hwee Cheong, Jong-Ho Yun, Kwan-Jong Roh, Ja-Hum Ku, Gil-Heyun Choi, Sung-Tae Kim, U-In Chung, Joo-Tae Moon, Byung-Il Ryu
Publikováno v:
12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004; 2004, p121-124, 4p
Autor:
Ohsung Song, Seong-Hwee Cheong
Publikováno v:
Korean Journal of Materials Research. 13:279~284-279~284
The process is widely employed in a salicide as well as an ohmic layer process. In this experiment, we investigated the characteristics of films by combinations of I-type (TiN 100/Co 150), II-type(TiN 100/Co 150/Ti 50), III-type(Ti 100/Co 150/Ti 50),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6cb194c72fae793cfeb48123a3353a1
https://doi.org/10.3740/mrsk.2003.13.5.279
https://doi.org/10.3740/mrsk.2003.13.5.279
Autor:
Seong-Hwee Cheong, Ohsung Song
Publikováno v:
Korean Journal of Materials Research. 13:200~204-200~204
A statistical experiment method was employed to investigate the window of the thermal stability of films which are popular for Ti-salicide and ohmic layers. The statistical experimental results showed that the first order term of thickness and anneal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::662e53eecd431a75c1729fe4bedce264
https://doi.org/10.3740/mrsk.2003.13.3.200
https://doi.org/10.3740/mrsk.2003.13.3.200
Publikováno v:
Korean Journal of Materials Research. 13:43~47-43~47
As and BFdopants are implanted for the formation of source/drain with dose of 110 ions/∼510 ions/ then formed cobalt disilicide with Co/Ti deposition and doubly rapid thermal annealing. Appropriate ion implantation and cobalt salicide process are e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e91654ad288bfe0055e3be206f97faf
https://doi.org/10.3740/mrsk.2003.13.1.043
https://doi.org/10.3740/mrsk.2003.13.1.043
Autor:
Ohsung Song, Seong-Hwee Cheong
Publikováno v:
Korean Journal of Materials Research. 12:883~887-883~887
We investigated the void formation in composite-titanium silicide() process. We varied the process conditions of polycrystalline/amorphous silicon substrate, composite deposition temperature, and silicidation annealing temperature. We report that the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3d2b98fa8d25c8775dc2a3f94baf5ab
https://doi.org/10.3740/mrsk.2002.12.11.883
https://doi.org/10.3740/mrsk.2002.12.11.883