Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Seong-Hee Han"'
Autor:
Seong-Hee Han, Dong-Wook Kim
Publikováno v:
Journal of Electromagnetic Engineering and Science, Vol 24, Iss 2, Pp 170-177 (2024)
This paper employs the 0.2 μm ETRI GaN HEMT process on SiC to develop a Ku-band GaN low-noise amplifier monolithic microwave integrated circuit (MMIC) characterized by high-input power robustness for radar transceiver modules. A source degeneration
Externí odkaz:
https://doaj.org/article/f9e7b51092e74f4d8f3a6074c984bff1
Publikováno v:
Journal of Electromagnetic Engineering and Science, Vol 22, Iss 6, Pp 678-685 (2022)
In this paper, using the 0.2 μm ETRI GaN HEMT process, we developed a C-band GaN dual-feedback low-noise amplifier MMIC for an RF receiver module that requires high-input power robustness. By applying a feedback microstrip line at the source of the
Externí odkaz:
https://doaj.org/article/6a8b47c1faaa430eb409d0e415fe061a
Publikováno v:
The Journal of Korean Institute of Electromagnetic Engineering and Science. 33:356-364
Publikováno v:
The transactions of The Korean Institute of Electrical Engineers. 70:1188-1196
Publikováno v:
Journal of Conservation Science. 32:561-570
Autor:
Seong Hee Han, Yun Sug Nam
Publikováno v:
The KIPS Transactions:PartB. :43-50
This study proposes design of courseware based on scaffolding for teaching math word problem solving of students with intellectual disabilities. This courseware not only offer various technological supports to solving difficult problems of students w
Publikováno v:
Innovations and Advances in Computer Sciences and Engineering ISBN: 9789048136575
SCSS (1)
SCSS (1)
Recently, Advent of Ubiquitous environment expect to change paradigm on the whole society. Specially, Ubiquitous is applied the field of construction had a ripple effect on the industry to be much avail. There has been increasing interest in developi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d714a7b1a2f24d3d0d8af82480519690
https://doi.org/10.1007/978-90-481-3658-2_96
https://doi.org/10.1007/978-90-481-3658-2_96