Zobrazeno 1 - 10 of 63 pro vyhledávání: '"Seong-Cheol Jang"'
1
Akademický článek
Recent progress in the development of backplane thin film transistors for information displays
Autor: Gwon Byeon, Seong Cheol Jang, Taewan Roh, Ji-Min Park, Hyun-Suk Kim, Yong-Young Noh
Publikováno v: Journal of Information Display, Vol 24, Iss 3, Pp 159-168 (2023)
This review aims to provide a technical roadmap and an overview of recent progress in the development of backplane thin film transistors (TFTs) for organic light-emitting diodes flat panel displays and next-generation flexible displays. In the introd
Externí odkaz: https://doaj.org/article/14ae21dc9c5d469682ab3264481fad13
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2
Akademický článek
Low temperature processed, highly stable CMOS inverter by integrating Zn-ON and tellurium thin-film transistors
Autor: Muhammad Naqi, Seong Cheol Jang, Yongin Cho, Ji Min Park, Joo On Oh, Hyun Yeol Rho, Hyun-Suk Kim, Sunkook Kim
Publikováno v: Journal of Information Display, Vol 24, Iss 3, Pp 199-204 (2023)
Semiconductors processed at low temperature for complementary metal–oxide semiconductors (CMOS) devices are receiving considerable attention in the field of integrated electronic applications. In this work, we demonstrated a CMOS inverter construct
Externí odkaz: https://doaj.org/article/33c391107b964483b41289d0fb407a3e
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3
Akademický článek
Oxide thin-film transistors based on i-line stepper process for high PPI displays
Autor: Ji-Min Park, Seong Cheol Jang, Seoung Min Lee, Min-Ho Kang, Kwun-Bum Chung, Hyun-Suk Kim
Publikováno v: Journal of Information Display, Vol 24, Iss 2, Pp 103-108 (2023)
Indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with a 1 um channel length were successfully fabricated by i-line lithography with a stepper process, resulting in high throughput. The a-IGZO TFT with a channel length of 1 μm exhibits h
Externí odkaz: https://doaj.org/article/e9b2e266ffa04398921b6868d1ad3a72
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4
Akademický článek
Deterministic role of fluorine incorporation in the amorphous Zn–O–N semiconductors: First-principles and experimental studies
Autor: Hyoung-Do Kim, Jong Heon Kim, Seong Cheol Jang, Ho-Hyun Nahm, Hyun-Suk Kim
Publikováno v: AIP Advances, Vol 11, Iss 10, Pp 105102-105102-7 (2021)
In this work, the effects of F incorporation in a-ZnON are investigated through first-principles calculations and experimental demonstrations. Based on first-principles calculations, the incorporated F in a-ZnON prefers to have structural properties
Externí odkaz: https://doaj.org/article/7b180683ff5540a890b7d54c4980836b
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7
Akademický článek
Low temperature activation of amorphous In-Ga-Zn-O semiconductors using microwave and e-beam radiation, and the associated thin film transistor properties
Autor: Seong Cheol Jang, Jozeph Park, Hyoung-Do Kim, Hyunmin Hong, Kwun-Bum Chung, Yong Joo Kim, Hyun-Suk Kim
Publikováno v: AIP Advances, Vol 9, Iss 2, Pp 025204-025204-6 (2019)
In-Ga-Zn-O (IGZO) films deposited by sputtering process generally require thermal annealing above 300°C to achieve satisfactory semiconductor properties. In this work, microwave and e-beam radiation are adopted at room temperature as alternative act
Externí odkaz: https://doaj.org/article/56fa2acb0c654aedb8a7a1ce377e2e42
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8
Nonvolatile High-Speed Switching Zn-O-N Thin-Film Transistors with a Bilayer Structure
Autor: Hyoung-Do Kim, Muhammad Naqi, Seong Cheol Jang, Ji-Min Park, Yun Chang Park, Kyung Park, Ho-Hyun Nahm, Sunkook Kim, Hyun-Suk Kim
Publikováno v: ACS Applied Materials & Interfaces. 14:13490-13498
Zinc oxynitride (ZnON) has the potential to overcome the performance and stability limitations of current amorphous oxide semiconductors because ZnON-based thin-film transistors (TFTs) have a high field-effect mobility of 50 cm
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f29b7996145f8f324b2fe04ca25e602f
https://doi.org/10.1021/acsami.1c24880
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9
Organic/Inorganic Hybrid Top-Gate Transistors with Ultrahigh Electron Mobility via Enhanced Electron Pathways
Autor: Ji-Min Park, Hyunkyu Lee, GunOh Lee, Seong Cheol Jang, Yun Hee Chang, Hyunmin Hong, Kwun-Bum Chung, Kyung Jin Lee, Dae Hwan Kim, Hyun-Suk Kim
Publikováno v: ACS applied materialsinterfaces.
The top-gate structure is currently adopted in various flat-panel displays because of its diverse advantages such as passivation from the external environment and process compatibility with industries. However, the mobility of the currently commercia
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f65284ca8934c3602a0c28936461432
https://pubmed.ncbi.nlm.nih.gov/36538477
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10
Chemically Tunable Organic Dielectric Layer on an Oxide TFT: Poly(p-xylylene) Derivatives
Autor: Hyoung-Do Kim, Seong Cheol Jang, Jaehyun Kim, Kihyeon Bae, Hyun-Suk Kim, Joerg Lahann, Kyung Jin Lee, Ji-Min Park
Publikováno v: ACS Applied Materials & Interfaces. 13:43123-43133
Inorganic materials such as SiOx and SiNx are commonly used as dielectric layers in thin-film transistors (TFTs), but recent advancements in TFT devices, such as inclusion in flexible electronics, require the development of novel types of dielectric
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3b111f59d939b581dc8f3ea35ea1252a
https://doi.org/10.1021/acsami.1c13865
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