Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Seong−Jin Yeon"'
Autor:
Jaewon Lee, Seong-Jin Yeon, Chang Hyun Ryu, Joshua (Sung) H. You, Kyung-Woo Kim, Baik-Chul Lee
Publikováno v:
Journal of Medical Imaging and Health Informatics. 6:1319-1323
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::106717d3b44a1cba8b51841e92429774
https://doi.org/10.1166/jmihi.2016.1920
https://doi.org/10.1166/jmihi.2016.1920
Autor:
Seong-Jin Yeon, Steven F. Messner
Publikováno v:
Comparative Criminology in Asia ISBN: 9783319549415
Empirical research in South Korea was largely focused on differential association theory and social learning theory before 1989 but, since the 1990s, studies have increasingly been located within the theoretical traditions of social control and self-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cca1b27cae74618386e16a74cf137bc3
https://doi.org/10.1007/978-3-319-54942-2_7
https://doi.org/10.1007/978-3-319-54942-2_7
Autor:
Seong-Jin Yeon, Kwang-Seok Seo
Publikováno v:
Japanese Journal of Applied Physics. 47:2868-2871
We fabricated 50 nm InAlAs/InGaAs metamorphic high electron mobility transistors (HEMTs) with a very thin barrier. Through the reduction of the gate–channel distance (dGC) in the epitaxial structure, a channel aspect ratio (ARC) of over three was a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6541a6b4192cf84d1a15088b951d6143
https://doi.org/10.1143/jjap.47.2868
https://doi.org/10.1143/jjap.47.2868
Autor:
Harqkyun Kim, Kwang-Seok Seo, Sung-Won Kim, Jin-Cherl Her, Donghwan Kim, Seong-Jin Yeon, Jimin Maeng
Publikováno v:
ECS Transactions. 6:577-589
In this paper, a novel low-damage silicon nitride passivation for 100 nm In0.45AlAs/In0.4GaAs MHEMTs has been developed using remote ICPCVD. The silicon nitride deposited by ICPCVD showed higher quality, higher density, and lower hydrogen concentrati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b81356b0981a252e35806d199aa7c6b2
https://doi.org/10.1149/1.2728821
https://doi.org/10.1149/1.2728821
Publikováno v:
Japanese Journal of Applied Physics. 46:2296-2299
Gate length reduction technology was developed for pseudomorphic high-electron-mobility transistors (P-HEMTs) applicable to nano-HEMTs. This technology utilizes various reactions between plasmas and dielectrics. Using optimum conditions for reducing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bda25fce1bbae8f7a71a74c6b94ba609
https://doi.org/10.1143/jjap.46.2296
https://doi.org/10.1143/jjap.46.2296
Publikováno v:
Japanese Journal of Applied Physics. 46:2300-2305
A high-speed and low-power delayed flip-flop circuit with non-return-to-zero mode output using a new negative differential resistance logic element is proposed and fabricated using resonant tunneling diode (RTD)/high electron mobility transistor (HEM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60bf6bcd13fcf6b94275758d3d8982cc
https://doi.org/10.1143/jjap.46.2300
https://doi.org/10.1143/jjap.46.2300
Publikováno v:
Japanese Journal of Applied Physics. 45:3376-3379
InAlAs/InGaAs high electron mobility transistors (HEMTs) have been a great contribution to the research and development of high-speed integrated circuits, owing to their high electron mobilities, high saturation velocities, and high sheet electron de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c990ca13931fa0e1cbbfaa9d6f9eb04d
https://doi.org/10.1143/jjap.45.3376
https://doi.org/10.1143/jjap.45.3376
Publikováno v:
Journal of Marriage and Family. 65:622-634
We examined the frequency of domestic violence and verbal altercations relative to the level of domestic conflict using survey data from the United States and Korea. We found evidence that individuals are generally less likely to use violence during
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c8530278b624a30454935bccecfe0bf
https://doi.org/10.1111/j.1741-3737.2003.00622.x
https://doi.org/10.1111/j.1741-3737.2003.00622.x
Publikováno v:
Japanese Journal of Applied Physics. 47:2877-2879
We demonstrate a novel and compact implementation of high-speed and low-power source-coupled-field-effect transistor (FET)-logic (SCFL)-type non-return-to-zero (NRZ) delayed flip-flop circuit using resonant tunneling diode (RTD)/high electron mobilit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b5c14c3a999390cd9652054e84d7410
https://doi.org/10.1143/jjap.47.2877
https://doi.org/10.1143/jjap.47.2877
Publikováno v:
Japanese Journal of Applied Physics. 45:3384-3386
Resonant tunneling diodes (RTDs) exhibit a negative-differential-resistance (NDR) characteristic and a picosecond-level switching time (1.5 ps). The NDR characteristic provides the possibility of reducing circuit complexity and power consumption. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b171e88dd6365c0fdd13b05544cf9609
https://doi.org/10.1143/jjap.45.3384
https://doi.org/10.1143/jjap.45.3384