Zobrazeno 1 - 10
of 230
pro vyhledávání: '"Seong‐Ook Jung"'
Publikováno v:
IEEE Access, Vol 9, Pp 28001-28011 (2021)
A NAND flash memory senses a cell current in the range of tens of nA, which is smaller than other nonvolatile memories in the read operation. Because of the small cell current, it is difficult to improve the latency and accuracy of the read operation
Externí odkaz:
https://doaj.org/article/7153fb4552784552b1caf7095a346a36
Publikováno v:
IEEE Access, Vol 9, Pp 35549-35561 (2021)
Recently, nonvolatile systems with nonvolatile flip-flops (NVFFs) have gained prominence for their energy efficiency in energy-harvesting devices and battery-operated Internet of Things applications. They are normally-off instantly-on, and thus, can
Externí odkaz:
https://doaj.org/article/a009250ee05945c6b122a925e53b0698
Publikováno v:
IEEE Access, Vol 9, Pp 57393-57403 (2021)
This paper proposes a bitline charge sharing suppressed bitline read assist (BCS RA) and a cell supply collapse write assist (BCS WA). The proposed BCS RA suppresses the bitline (BL) voltage to half of the supply voltage ( $\text{V}_{\mathrm {DD}}$ )
Externí odkaz:
https://doaj.org/article/b7b59b53ba5a4576bf1b243a8689b3bb
Publikováno v:
IEEE Access, Vol 9, Pp 127895-127905 (2021)
The ferroelectric field-effect transistor (FeFET) is one of the most promising candidates for emerging nonvolatile memory devices owing to its low write energy and high $I_{\mathrm {ON}}/I_{\mathrm {OFF}}$ ratio. For FeFET applications as nonvolatile
Externí odkaz:
https://doaj.org/article/76cfe149f43b4ce5a678498f27d22904
Publikováno v:
IEEE Access, Vol 9, Pp 64105-64115 (2021)
Near-threshold voltage ( $V_{th}$ ) operation is an effective method for lowering energy consumption. However, it increases the impact of $V_{th}$ variation significantly, which makes it difficult for previously proposed static random access memory (
Externí odkaz:
https://doaj.org/article/0dcb137ca8e845d79657a954367a184d
Publikováno v:
IEEE Access, Vol 8, Pp 187126-187139 (2020)
An embedded level-shifting (ELS) dual-rail SRAM is proposed to enhance the availability of dual-rail SRAMs. Although dual-rail SRAM is a powerful solution for satisfying the increasing demand for low-power applications, the enormous performance degra
Externí odkaz:
https://doaj.org/article/5f2d61c91b2b4227b032f18d9b07faa7
Publikováno v:
IEEE Access, Vol 8, Pp 187754-187765 (2020)
The convolutional neural network (CNN)-based super-resolution (SR) has shown outstanding performance in the field of computer vision. The implementation of inference hardware for CNN-based SR has suffered from the intensive computation with severely
Externí odkaz:
https://doaj.org/article/5763f797fe0447f9a6df06fdc9748e65
Publikováno v:
IEEE Access, Vol 8, Pp 216922-216932 (2020)
Recently, spiking neural networks have gained attention owing to their energy efficiency. All-to-all spike-time dependent plasticity is a popular learning algorithm for spiking neural networks because it is suitable for nondifferentiable spike event-
Externí odkaz:
https://doaj.org/article/3440094f902b4182a3223e613593747b
Publikováno v:
Sensors, Vol 20, Iss 2, p 493 (2020)
We propose a ring oscillator (RO) based current-to-voltage-to-frequency (I−V−F) converting current transducer with a cascade bias circuit. The I−V−F converting scheme guarantees highly stable biasing against RO, with a rail-to-rail output ope
Externí odkaz:
https://doaj.org/article/15ae9375742f4b65bc52572ff8e0406c
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 70:806-818