Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Seon-Pil Jang"'
Autor:
Mark C. Hersam, Bong-Jun Kim, Michael L. Geier, Pradyumna L. Prabhumirashi, Ananth Dodabalapur, Seon-Pil Jang
Publikováno v:
Nano Letters. 14:3683-3687
The materials combination of inkjet-printed single-walled carbon nanotubes (SWCNTs) and zinc tin oxide (ZTO) is very promising for large-area thin-film electronics. We compare the characteristics of conventional complementary inverters and ring oscil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5a251f01936dfd2cfc7afed37137e7ab
https://doi.org/10.1021/nl5016014
https://doi.org/10.1021/nl5016014
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany). 13(11)
Improved thin-film microbatteries are needed to provide appropriate energy-storage options to power the multitude of devices that will bring the proposed “Internet of Things” network to fruition (e.g., active radio-frequency identification tags a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fefb752e8fbf0c6759e7558c03db76a5
https://pubmed.ncbi.nlm.nih.gov/28075054
https://pubmed.ncbi.nlm.nih.gov/28075054
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany). 11(41)
Short channel field-effect-transistors with inkjet-printed semiconducting carbon nanotubes are fabricated using a novel strategy to minimize material consumption, confining the inkjet droplet into the active channel area. This fabrication approach is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6186a539649b2acc7ed51dc54f515771
https://pubmed.ncbi.nlm.nih.gov/26312458
https://pubmed.ncbi.nlm.nih.gov/26312458
Publikováno v:
Flexible and Printed Electronics. 1:035001
We report on the effects of mechanical distortion and gate insulator-semiconductor interface modification on the electronic transport characteristics of inkjet printed short channel length single walled carbon nanotube (SWCNT) transistors with Al2O3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2042ec36736aa164c790701641533e21
https://doi.org/10.1088/2058-8585/1/3/035001
https://doi.org/10.1088/2058-8585/1/3/035001
Publikováno v:
Small. 11:5465-5465
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ffa89fce1fd1ef4754bacebf7fdfbee
https://doi.org/10.1002/smll.201570248
https://doi.org/10.1002/smll.201570248
Autor:
Michael L. Geier, Seon-Pil Jang, Mark C. Hersam, Pradyumna L. Prabhumirashi, Ananth Dodabalapur, Bong-Jun Kim
Publikováno v:
Applied Physics Letters. 105:122107
We report on the marked improvements in key device characteristics of single walled carbon nanotube (SWCNT) field-effect transistors (FETs) by coating the active semiconductor with a fluoropolymer layer such as poly(vinylidene fluoride-trifluoroethyl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3f031f24996fd2e8b9b393dd464ab6b
https://doi.org/10.1063/1.4895069
https://doi.org/10.1063/1.4895069
Autor:
Seon-Pil Jang, Michael L. Geier, Ananth Dodabalapur, Bong-Jun Kim, Mark C. Hersam, Pradyumna L. Prabhumirashi
Publikováno v:
Applied Physics Letters. 104:062101
We report ambipolar field-effect transistors (FETs) consisting of inkjet printed semiconductor bilayer heterostructures utilizing semiconducting single-walled carbon nanotubes (SWCNTs) and amorphous zinc tin oxide (ZTO). The bilayer structure allows
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c285c0ac40c34f050857f8de9072994
https://doi.org/10.1063/1.4864629
https://doi.org/10.1063/1.4864629
Autor:
Pradyumna L. Prabhumirashi, Mark C. Hersam, Seon-Pil Jang, Ananth Dodabalapur, Michael L. Geier, Bong-Jun Kim
Publikováno v:
Applied Physics Letters. 103:082119
High-performance single-walled carbon nanotube (SWCNT) thin-film transistors are fabricated by single-pass inkjet printing of SWCNTs on high-κ solution-processed ZrO2 gate dielectric. We demonstrate that an ultraviolet ozone treatment of the ZrO2 su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3dc15689359b8ea9c634e3cedb6428b
https://doi.org/10.1063/1.4819465
https://doi.org/10.1063/1.4819465
Publikováno v:
SID Symposium Digest of Technical Papers. 36:249
In this work, poly(4-vinylphenol)(PVP), one of the most commonly used polymer gate dielectrics, was modified to control its surface property. The hydroxyl group of PVP was substituted with hexadecane alkyl chain. The long alkyl chains of the surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46cff4e75c39239251cdfee848f0f449
https://doi.org/10.1889/1.2036416
https://doi.org/10.1889/1.2036416