Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Seon-Geun Oh"'
Publikováno v:
Advances in Materials Science and Engineering, Vol 2014 (2014)
The characteristics of the dry etching of SiNx:H thin films for display devices using SF6/O2 and NF3/O2 were investigated using a dual-frequency capacitively coupled plasma reactive ion etching (CCP-RIE) system. The investigation was carried out by v
Externí odkaz:
https://doaj.org/article/209740fb72e242f5a665aa71666c5916
Autor:
Byeong-Jun Kim, Seon-Geun Oh, Young-Jun Lee, Hong-Sik Kim, Jong Hyun Seo, Heehwan Choe, Jae-Hong Jeon
Publikováno v:
Science of Advanced Materials. 8:830-833
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d23e817dedb3590427114361403defde
https://doi.org/10.1166/sam.2016.2539
https://doi.org/10.1166/sam.2016.2539
Publikováno v:
Journal of Nanoscience and Nanotechnology. 15:8557-8565
As research and development of high-performance devices are becoming increasingly important in the flat panel display industry, new structures and processes are essential to improve the performance of the TFT backplane. Also, high-density plasma syst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::356fe22d91d94bd14076a976a47b0746
https://doi.org/10.1166/jnn.2015.11513
https://doi.org/10.1166/jnn.2015.11513
Autor:
Seon-Geun Oh1, Kwang-Su Park1, Young-Jun Lee1, Jae-Hong Jeon1, Hee-Hwan Choe1 choehh@kau.ac.kr, Jong-Hyun Seo2
Publikováno v:
Advances in Materials Science & Engineering. 2014, p1-8. 8p.
Autor:
Young Jun Lee, Seon-Geun Oh, Byeong Jun Kim, Hong-Sik Kim, Jae-Hong Jeon, Jong-Hyun Seo, Heehwan Choe
Publikováno v:
Science of Advanced Materials. 8:851-853
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c867742784f7a2a7db9ea7fb5e721d41
https://doi.org/10.1166/sam.2016.2543
https://doi.org/10.1166/sam.2016.2543
Publikováno v:
Plasma Science and Technology. 16:758-766
Spatial distributions of plasma parameters such as electron density, electron temperature and electric potential were investigated using a commercial simulation software (COMSOLTM) to predict the effects of antenna configuration in a large area induc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ba250eb3594f90cd9d5ddb4447c3b28
https://doi.org/10.1088/1009-0630/16/8/06
https://doi.org/10.1088/1009-0630/16/8/06
Publikováno v:
ADVANCES IN MATERIALS SCIENCE AND ENGINEERING
Advances in Materials Science and Engineering, Vol 2014 (2014)
Advances in Materials Science and Engineering, Vol 2014 (2014)
The characteristics of the dry etching ofSiNx:H thin films for display devices using SF6/O2and NF3/O2were investigated using a dual-frequency capacitively coupled plasma reactive ion etching (CCP-RIE) system. The investigation was carried out by vary
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::579bd517bc0cc74064123949ee8334f4
https://doi.org/10.1155/2014/608608
https://doi.org/10.1155/2014/608608
Autor:
Seon-Geun, Oh, Young-Jun, Lee, Jae-Hong, Jeon, Young-Jin, Kim, Jong-Hyun, Seo, Hee-Hwan, Choe
Publikováno v:
Journal of nanoscience and nanotechnology. 15(11)
As research and development of high-performance devices are becoming increasingly important in the flat panel display industry, new structures and processes are essential to improve the performance of the TFT backplane. Also, high-density plasma syst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::0abce30f5cf34251c7ceaa26993778f7
https://pubmed.ncbi.nlm.nih.gov/26726552
https://pubmed.ncbi.nlm.nih.gov/26726552
Publikováno v:
AIP Conference Proceedings.
A new algorithm for steady-state fluid simulation of high density, low temperature plasma discharge is suggested. The restriction on simulation time step and a new method to overcome it is discussed. For a comparison of the new method with a previous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::100db8c46b4aea2065bbb86258920954
https://doi.org/10.1063/1.4864527
https://doi.org/10.1063/1.4864527
Publikováno v:
AIP Conference Proceedings; 2014, p219-222, 4p, 1 Graph