Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Seolhye Park"'
Publikováno v:
Materials, Vol 14, Iss 11, p 3005 (2021)
In the semiconductor etch process, as the critical dimension (CD) decreases and the difficulty of the process control increases, in-situ and real-time etch profile monitoring becomes important. It leads to the development of virtual metrology (VM) te
Externí odkaz:
https://doaj.org/article/a895928c6d814e04b26c81e9a6ea2683
Publikováno v:
Current Applied Physics. 45:105-113
Autor:
Seolhye Park, Jaegu Seong, Yunchang Jang, Hyun-Joon Roh, Ji-Won Kwon, Jinyoung Lee, Sangwon Ryu, Jaemin Song, Ki-Baek Roh, Yeongil Noh, Yoona Park, Yongsuk Jang, Taeyoung Cho, Jae-Ho Yang, Gon-Ho Kim
Publikováno v:
Journal of the Korean Physical Society. 80:647-669
Autor:
Gon-Ho Kim, Nam-Kyun Kim, Sanywon Ryu, Sangmin Jeong, Seolhye Park, Ji-Won Kwon, Yunchang Jang, Hyun-Joon Roh
Publikováno v:
Current Applied Physics. 19:1068-1075
A phenomenology-based virtual metrology (VM) for monitoring SiO2 etching depth was proposed by Park (2015). It achieved high prediction accuracy by introducing newly developed plasma information (PI) variables as designated inputs, called PI-VM. The
Autor:
Haneul Lee, Nam-Kyun Kim, Myeong-Geon Lee, Ji-Won Kwon, Sung Hyun Son, Namjae Bae, Taejun Park, Seolhye Park, Gon-Ho Kim
Publikováno v:
Plasma Sources Science and Technology. 31:084006
The effects of ion collisions on plasma–sheath formation are investigated experimentally for a low-density and low-pressure discharge. The space potential and ion velocity distribution measurements at high spatial resolution show that the ion colli
Autor:
Gon-Ho Kim, Younggil Jin, Nam-Kyun Kim, Sangwon Ryu, Hyun-Joon Roh, Seolhye Park, Yunchang Jang
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 31:232-241
A phenomenological-based virtual metrology (VM) technique is developed for predicting the silicon nitride film thickness in multi-layer plasma-enhanced chemical vapor deposition (PECVD). Particularly, the analysis of optical emission spectroscopy bas
Autor:
Yongsuk Jang, Taeyoung Cho, Seolhye Park, Yoona Park, Yeongil Noh, Gon-Ho Kim, Jaegu Seong, Jae-Ho Yang
Publikováno v:
Physics of Plasmas. 28:103505
The high-value process strategy in the organic light emitting diode display manufacturing requires strict etching profile control to obtain the normal performance of the display pixels because of the correlation between the etched structure of the pr
Publikováno v:
Materials, Vol 14, Iss 3005, p 3005 (2021)
Materials
Volume 14
Issue 11
Materials
Volume 14
Issue 11
In the semiconductor etch process, as the critical dimension (CD) decreases and the difficulty of the process control increases, in-situ and real-time etch profile monitoring becomes important. It leads to the development of virtual metrology (VM) te
Autor:
Gon-Ho Kim, Seolhye Park, Yunchang Jang, Sangmin Jeong, Hyun-Joon Roh, Sangwon Ryu, Jae-Myung Choe
Publikováno v:
Thin Solid Films. 603:154-159
Vacuum pumps of different ages were used to prepare Cl 2 based plasmas for use in Cr etching. The effects of the vacuum pump age on the etching results were investigated using optical emission spectroscopy analysis. The composition of gas at the base
Autor:
Hyun-Joon Roh, Seok-Hwan Lee, Nam-Kyun Kim, Sung-Ryul Huh, Sangwon Ryu, Seolhye Park, Gon-Ho Kim
Publikováno v:
Current Applied Physics. 15:1173-1183
Acceptable data for electron energy probability function (EEPF) measurement in low-pressure plasmas require a small depletion in near-zero electron energy and a large dynamic range in the high-energy regime. The voltage drop across internal resistanc