Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Seokyoon, Shin"'
Autor:
Seungjin Lee, Seokyoon Shin, Giyul Ham, Juhyun Lee, Hyeongsu Choi, Hyunwoo Park, Hyeongtag Jeon
Publikováno v:
AIP Advances, Vol 7, Iss 4, Pp 045307-045307-7 (2017)
Tin disulfide (SnS2) has attracted much attention as a two-dimensional (2D) material. A high-quality, low-temperature process for producing 2D materials is required for future electronic devices. Here, we investigate tin disulfide (SnS2) layers depos
Externí odkaz:
https://doaj.org/article/23b170d29db943b0ad9cd8889542213c
Autor:
Juhyun Lee, Jeongsu Lee, Giyul Ham, Seokyoon Shin, Joohyun Park, Hyeongsu Choi, Seungjin Lee, Juyoung Kim, Onejae Sul, Seungbeck Lee, Hyeongtag Jeon
Publikováno v:
AIP Advances, Vol 7, Iss 2, Pp 025311-025311-6 (2017)
We report the effect of zirconium oxide (ZrO2) layers on the electrical characteristics of multilayered tin disulfide (SnS2) formed by atomic layer deposition (ALD) at low temperatures. SnS2 is a two-dimensional (2D) layered material which exhibits a
Externí odkaz:
https://doaj.org/article/fb17744620934694a2db29097c57153c
Autor:
Changhyun Jin, Seokyoon Shin, Ali Mirzaei, Myung Sik Choi, Hyeongtag Jeon, Wansik Oum, Han Gil Na, Jae Hoon Bang, Hyeong Su Choi, Hyunwoo Park, Namgue Lee, Hyoun Woo Kim, Yeonsik Choi
Publikováno v:
Ceramics International. 45:7723-7729
We report the electrical and optical characteristics of SnO2 thin films irradiated by microwaves (MWs) and grown using atomic layer deposition in a commercial MW oven operating at a frequency of 2.45 GHz. The properties of the MW-irradiated SnO2 thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cf34d0c07849d3927ec8f6280cb5b33
https://doi.org/10.1016/j.ceramint.2019.01.074
https://doi.org/10.1016/j.ceramint.2019.01.074
Autor:
Hyunjung Kim, Seokyoon Shin, Woochool Jang, Kunyoung Lee, Hyeongtag Jeon, Youngkyun Kweon, Jaemin Lee
Publikováno v:
Thin Solid Films. 645:334-339
The deposition of SiOC thin films via remote plasma atomic layer deposition was investigated. Octamethylcyclotetrasiloxane (OMCTS) and O2, Ar, H2 plasmas were respectively used as a precursor and reactants during the deposition process at 400 °C. Pl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a9e30d1b80a60c13a4fa97b1f5e0e15
https://doi.org/10.1016/j.tsf.2017.10.045
https://doi.org/10.1016/j.tsf.2017.10.045
Autor:
Hyeongsu Choi, Seokyoon Shin, Yeongtae Choi, Namgue Lee, Hyunwoo Park, Keunsik Kim, Hyeongtag Jeon
Publikováno v:
Journal of Vacuum Science & Technology A. 38:062403
Aluminum oxide films deposited by spatial atomic layer deposition have been used for thin-film encapsulation of organic light-emitting diodes. In this study, a multidensity layer structure consisting of two Al2O3 layers of different densities was dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8526032f805ed979e85cef0bd089ce10
https://doi.org/10.1116/6.0000485
https://doi.org/10.1116/6.0000485
Autor:
Woochool Jang, Jaewan Chang, Heeyoung Jeon, Hyungtak Seo, Hyoseok Song, Changhee Shin, Seokyoon Shin, Joo Hyun Park, Younsoo Kim, Jae Hyoung Choi, Han-jin Lim, Hyeongtag Jeon
Publikováno v:
Thin Solid Films. 619:317-322
In this study, we report the effect of process conditions on the crystallinity and energy band structure of atomic layer deposition (ALD) ZrO2 films deposited, using tris(dimethylamino) cyclopentadienyl zirconium as a precursor and ozone as a reactan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a890e970c9b9152c1d1018638f0f53a
https://doi.org/10.1016/j.tsf.2016.10.044
https://doi.org/10.1016/j.tsf.2016.10.044
Publikováno v:
Thin Solid Films. 599:119-124
We investigated the characteristics of 100 nm-thick Al 2 O 3 /ZrO 2 laminated films grown by ozone (O 3 )-based atomic layer deposition (ALD) at low temperature (100 °C) as thin film encapsulation (TFE). Calcium (Ca) test was performed at a relative
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0cb663981e70bc4568acd97be87fd3b
https://doi.org/10.1016/j.tsf.2015.12.044
https://doi.org/10.1016/j.tsf.2015.12.044
Autor:
Hyeongsu, Choi, Jeongsu, Lee, Seokyoon, Shin, Juhyun, Lee, Seungjin, Lee, Hyunwoo, Park, Sejin, Kwon, Namgue, Lee, Minwook, Bang, Seung-Beck, Lee, Hyeongtag, Jeon
Publikováno v:
Nanotechnology. 29(21)
Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::1ed50a8d5769a4b2ae8683357a571818
https://pubmed.ncbi.nlm.nih.gov/29498937
https://pubmed.ncbi.nlm.nih.gov/29498937
Publikováno v:
Journal of Applied Physics; 2014, Vol. 115 Issue 7, p1-7, 7p, 1 Color Photograph, 1 Black and White Photograph, 4 Diagrams, 1 Chart, 5 Graphs
Autor:
Hyeongtag Jeon, Giyul Ham, Hyungtak Seo, Byungsu Cho, Joo Hyun Park, Heewang Yang, Seokyoon Shin
Publikováno v:
Current Applied Physics. 14:1767-1770
We reported the effects on the electrical behavior of amorphous indium–gallium–zinc oxide (a-IGZO) thin film transistors (TFTs) after introducing various positions and sizes of Au nanoparticles (NPs) in the channel layer. These TFTs showed an off
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdab4fced13345469bf2b4e1d02faed2
https://doi.org/10.1016/j.cap.2014.09.027
https://doi.org/10.1016/j.cap.2014.09.027