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pro vyhledávání: '"Seokyeon Shin"'
Autor:
Minseung Kang, Ung Cho, Jaehyeon Kang, Narae Han, Hyeong Jun Seo, Jee‐Eun Yang, Seokyeon Shin, Taehyun Kim, Sangwook Kim, Changwook Jeong, Sangbum Kim
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 8, Pp n/a-n/a (2024)
Abstract Charge storage synaptic circuits employing InGaZnO thin‐film transistors (IGZO TFTs) and capacitors are a promising candidate for on‐chip trainable neural network hardware accelerators. However, IGZO TFTs often exhibit bias instability.
Externí odkaz:
https://doaj.org/article/aa30a18f4ea4494c860be9a42817b039
