Zobrazeno 1 - 10
of 64
pro vyhledávání: '"Seok-jun Won"'
Autor:
Seongjun Cho, Juhyun Kim, Seok-jun Won, Beom-Jun Kim, Seong-hee Park, Jinsung Kim, Moonhyun Lee
Publikováno v:
International Symposium for Testing and Failure Analysis.
In this paper, the stacking fault defects in FinFETs are described as the root cause of the PLL failure. Failure analysis approaches such as photon emission microscopy and nano probing were applied to pinpoint the exact stacking fault location in eve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13c662e35db5e2790151439ff1e8cdc8
https://doi.org/10.31399/asm.cp.istfa2019p0313
https://doi.org/10.31399/asm.cp.istfa2019p0313
Autor:
Jae Hyun Kim, Sunnu Shim, Bon-young Koo, Wonse Kim, Wookhyun Cho, Ki-Soo Lee, Gwang Wook Lee, Seongjun Cho, Seok-jun Won
Publikováno v:
Microelectronics Reliability. 114:113874
Failure Analysis (FA) on Fully Depleted Silicon on Insulator (FDSOI) device is challenging due to its unique structure with buried oxide layer. Typical failure analyses for the bulk device are not viable to isolate the fault location as the first ste
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27b854f20402550ae2fac4cd1bce0ea5
https://doi.org/10.1016/j.microrel.2020.113874
https://doi.org/10.1016/j.microrel.2020.113874
Publikováno v:
2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
As device feature becomes smaller, the different types of failure mechanism increases. Electrical Failure Analysis (EFA) becomes more challenging and complex. Especially functional test failures where conventional isolation techniques such as photon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fa33de996c0587ec54bc511df646bc8
https://doi.org/10.1109/ipfa.2018.8452488
https://doi.org/10.1109/ipfa.2018.8452488
Autor:
Ju-Heon Kim, Hyunmi Sim, Dongkeun Na, Tae-Soo Park, Euna Ok, Yong-Beom Cho, Dae Hyun kim, Ho Seok Song, Seok-jun Won
Publikováno v:
International Symposium for Testing and Failure Analysis.
In this paper, impact of carbon on threshold voltage in MOSFET-based device is studied by 3D-atom probe tomography (APT). Carbon is one of most difficult contaminants incorporated from fab-environment to be detected by typical analytical techniques s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cee370582d1ddb07d49d0156b4da03d4
https://doi.org/10.31399/asm.cp.istfa2017p0123
https://doi.org/10.31399/asm.cp.istfa2017p0123
Autor:
Hyeyoung Hong, Seonghyun Yang, Tae-Soo Park, Suhaeng Heo, Yong-Woon Han, Yong-Beom Cho, Hun-Seong Choi, Seok-jun Won
Publikováno v:
2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Defect localization of short failures has been a big challenge in modern advanced nanoscale devices. In recent years, Electron Beam Induced Resistance Change (EBIRCh) technique has been applied to failure analysis. The EBIRCh technique incorporated i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80e69f66b2b83ffa57f11f7493500f8a
https://doi.org/10.1109/ipfa.2017.8060090
https://doi.org/10.1109/ipfa.2017.8060090
Autor:
Euna Ok, Seok-jun Won, Yong-Woon Han, Sunnu Shim, Wonse Kim, Gwang Wook Lee, Daeeun Jeong, Jae Hyun Kim, Seongjun Cho, Suhaeng Heo, Jinsung Kim, JoonMyoung Lee, Hun-Seong Choi
Publikováno v:
Microelectronics Reliability. :113431
Currently, STT-MRAM is the one of the highly demanding device as a good replacement of the conventional working memory with the merits on the cost, power, performance, and reliability. With the new process challenges on MTJ stack, the resistive devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::229c24b8b2e06ebb76f3787d95d0ae87
https://doi.org/10.1016/j.microrel.2019.113431
https://doi.org/10.1016/j.microrel.2019.113431
Despite many successes of genome-wide association (GWA) studies, known susceptibility variants identified by GWAS have the modest effect sizes and we met noticeable skepticism about the risk prediction model building with large-scale genetic data. Ho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87d09e540f52c5141fdf2fc036612d52
Publikováno v:
ACS Applied Materials & Interfaces. 3:1633-1639
Rapid atomic layer deposition (RALD) of SiO₂ thin films was achieved using trimethyl-aluminum and tris(tert-pentoxy)silanol (TPS) as the catalyst and Si precursor, respectively. A maximum growth rate as high as ∼28 nm/cycle was obtained by optimi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f213907bf8b7cecc93cc2ea7a47eb55
https://doi.org/10.1021/am200176j
https://doi.org/10.1021/am200176j
Autor:
Jae Kyeong Jeong, Hyeong Joon Kim, Myung Soo Huh, Seung Ha Oh, Bong Sop Yang, Seok-jun Won, Cheol Seong Hwang
Publikováno v:
ECS Transactions. 25:119-126
Recently, amorphous InGaZnO thin film transistors (TFTs) have been intensively studied because they exhibit large mobility (>10cm/Vs) and relatively good stability despite their amorphous phase. Before InGaZnO TFTs as a backplane device are adopted i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a35867b44d296fdc1d79fc0244e99a6b
https://doi.org/10.1149/1.3422588
https://doi.org/10.1149/1.3422588
Autor:
Hyeong Joon Kim, Yu Jin Choi, Jaeyeong Heo, Myung Soo Huh, Sang-Hyun Park, Sungin Suh, Cheol Seong Hwang, Seok-jun Won
Publikováno v:
ECS Transactions. 25:367-376
For the first time, we report transparent analog capacitors using ITO electrodes and HfO2 (and/or Al2O3) high-k dielectrics. The use of ITO bottom and top electrodes did not cause the electrical degradation to the capacitor compared to TiN and Pt ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2a696ef098b95333d16698a2fd3a90c
https://doi.org/10.1149/1.3205071
https://doi.org/10.1149/1.3205071