Zobrazeno 1 - 9 of 9 pro vyhledávání: '"Seok-Sik Kim"'
1
Selective Epitaxial Growth of Silicon Layer Using Batch-Type Equipment for Vertical Diode Application to Next Generation Memories
Autor: Kwang Ryul Kim, Joo Tae Moon, Chang Jin Kang, Kong Soo Lee, Hongsik Jeong, Hyunho Park, Jae Jong Han, Hanwook Jeong, Young Sub Yoo, Byoungdeog Choi, Daehan Yoo, Seok Sik Kim
Publikováno v: ECS Transactions. 28:281-286
Vertical diodes for cross-point phase change memory were realized by selective epitaxial growth (SEG) technique using cyclic chemical vapor deposition method. H2/SiH4/Cl2 cyclic CVD system was introduced in batch-type vertical furnace equipement, rep
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::85797a4014689c06e6595198abd2049f
https://doi.org/10.1149/1.3375613
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2
Failure analysis on the standby current due to dislocation in STI structure of flash memory
Autor: Hansoo Kim, Hyung Mo Yang, Ji Woong Sue, Seok Sik Kim, Juhyeon Ahn, Ji Woon Rim, Ki Hyun Hwang, Sang In Kim, Hee Seong Yang, Yu Gyun Shin, Sun Kyu Whang, Woon Kyung Lee, Han Ku Cho
Publikováno v: 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.
The technology of increasing Internal Vcc without using memory tester is used to enhance the photon emission and the failure range is defined in detail by nano probing. With these methods, we found out that the leakage current was caused by dislocati
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::04c6158357453ec664b37185fab766b4
https://doi.org/10.1109/ipfa.2012.6306313
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3
DRAM Static Refresh Weak Cell Characterization and Structure Analysis
Autor: Seok Sik Kim, Yong Ho Yoo, Tae Jung Park, Seok-Woo Nam, Gyo Young Jin, Chang-Jin Kang, Jin Choi, Juhyeon Ahn, Sung Ho Lee, Joo-young Lee
Publikováno v: International Symposium for Testing and Failure Analysis.
Data retention characteristic is one of the most critical issues in low power DRAMs because it determines idle currents of self-refresh operation. Compared to normal healthy cells, a few ppm orders of cells in a tail distribution have much higher lea
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c7ff71983f1f2de411cf7da84e24a626
https://doi.org/10.31399/asm.cp.istfa2011p0182
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4
Novel capacitor technology for high density stand-alone and embedded DRAMs
Autor: Ki Hyun Hwang, Seung-Hwan Lee, Seok Sik Kim, Dong Chan Kim, Jae Soon Lim, S. Choi, Sang-In Lee, Kwang Hyun Chin, Yeong-kwan Kim, Moon Yong Lee, Seo Young Dong, Man-Ho Cho, Young-sun Kim, Wan Don Kim, Kab Jin Nam, Joo Tae Moon, Hong-bae Park, Young Wook Park
Publikováno v: International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).
Novel Al/sub 2/O/sub 3/ process was developed in order to extend the applicability of reliable SIS and MIS Al/sub 2/O/sub 3/ capacitors as well as Al/sub 2/O/sub 3/ EBL for a MIM capacitor. By applying ALD process utilizing a smart growth mechanism,
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3c48497a36b87b4c87e1ed2016787e3f
https://doi.org/10.1109/iedm.2000.904332
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6
Low-Temperature Solid Phase Epitaxial Regrowth of Silicon for Stacked Static Random Memory Application
Autor: Seok Sik Kim, Byoungdeog Choi, Joo Tae Moon, Soon Moon Jung, Hyunho Park, Daehan Yoo, Hanwook Jeong, Kwang Ryul Kim, Yong Hoon Son, Chadong Yeo, Kong Soo Lee
Publikováno v: Japanese Journal of Applied Physics. 50:01AB06
Solid phase epitaxy (SPE) techniques have been studied to realize stacked static random memory (SRAM) devices. Among the candidates including epitaxial lateral overgrowth (ELO) and laser epitaxial growth (LEG) techniques, SPE is the most stable and c
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fbe1ac061caa9a0d46e0c7a8f8dab83b
https://doi.org/10.1143/jjap.50.01ab06
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7
Selective Epitaxial Growth of Silicon for Vertical Diode Application
Autor: Kwang Ryul Kim, Daehan Yoo, Byoungdeog Choi, Hanwook Jeong, Chang Jin Kang, Seok Sik Kim, Hyunho Park, Hongsik Jeong, Joo Tae Moon, Jae Jong Han, Kong Soo Lee, Yong Woo Hyung
Publikováno v: Japanese Journal of Applied Physics. 49:08JF03
Selectivity control in silicon selective epitaxial growth (SEG) for deep contact patterns, which is one of the key processes for silicon-based stacked devices and cell switches for next generation memories, was studied. Absolute values of selectivity
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4197ed0a5234d4f57a93d3ee7aeaeebc
https://doi.org/10.1143/jjap.49.08jf03
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