Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Seok-Ryoul Lee"'
Autor:
Seung-Won Jung, SooYong Yoon, Ho-Gil Kang, Jong-Uk Bae, In-Byeong Kang, Seok-Ryoul Lee, Hye-Kyung Park
Publikováno v:
SID Symposium Digest of Technical Papers. 50:1130-1133
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::342fa69240c7938bbaf69c8bdd7aee5a
https://doi.org/10.1002/sdtp.13128
https://doi.org/10.1002/sdtp.13128
Publikováno v:
Journal of the Korean Physical Society. 73:1329-1333
We investigated the mechanism of mobility enhancement after the dehydrogenation process in polycrystalline silicon (poly-Si) thin films. The dehydrogenation process was performed by using an in-situ CVD chamber in a N2 ambient or an ex-situ furnace i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d01372fa3980dd2b9ed6bb336d6ea9a8
https://doi.org/10.3938/jkps.73.1329
https://doi.org/10.3938/jkps.73.1329
Publikováno v:
Journal of the Korean Vacuum Society. 17:215-219
The bonding structure and composition of silicon nitride (SiNx) films were investigated by using Fourier transform infrared spectroscopy (FT-IR). SiNx films were deposited on Si substrate at using a conventional PECVD system. The compositions of Si a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0eb52860615de2db82136d196b1148e
https://doi.org/10.5757/jkvs.2008.17.3.215
https://doi.org/10.5757/jkvs.2008.17.3.215
Autor:
Eun Jung Kim, Hee-Young Song, Byeong-Koo Kim, Soo-ho Kim, A-Jung Song, Jae-Ha Choi, Ji-Soo Kim, Ji-Yun Jang, Sung-Hoe Yoon, Seok-Ryoul Lee
Publikováno v:
SID Symposium Digest of Technical Papers. 42:756-757
In order to protect from the electrostatic damage it is common to deposit ITO thin layer on the rear side of CF substrate for the IPS based LCDs. But some polarizer assay of an IPS cell was found losing its protection ability as stored in the humid e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f2c83ef493b78243bfb3fb231d7ca0e
https://doi.org/10.1889/1.3621438
https://doi.org/10.1889/1.3621438