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pro vyhledávání: '"Seok-Boem Choi"'
Extraction‐efficiency enhancement of InGaN‐based vertical LEDs on hemispherically patterned sapphire
Publikováno v:
physica status solidi c. 4:2806-2809
To improve the external quantum efficiency, a vertical type InGaN LED (VT-LED) is fabricated on a sapphire substrate with a surface hemispherically-patterned by laser lift-off (LLO) technique. As a result, the VT-LEDs with a concavely patterned surfa
Publikováno v:
IEEE Photonics Technology Letters. 20:345-347
To improve the external quantum efficiency, we have proposed a new method utilizing surface roughening of vertical-type light-emitting diodes (VT-LEDs) fabricated on hemispherical patterned sapphire substrate by using a laser lift-off technique. The
Publikováno v:
IEEE Photonics Technology Letters; 3/1/2008, Vol. 20 Issue 5, p345-347, 3p