Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Seok Jun Kang"'
Autor:
Yeong Jo Baek, In Hye Kang, Sang Ho Hwang, Ye Lin Han, Min Su Kang, Seok Jun Kang, Seo Gwon Kim, Jae Geun Woo, Eun Seong Yu, Byung Seong Bae
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)
Abstract A vertical oxide thin-film transistor was developed with interfacial oxidation for low voltage operation. The gate metal was used as a spacer for the definition of the transistor’s channel as well as the gate electrode. After definition of
Externí odkaz:
https://doaj.org/article/6f7df80b54b44a8f92de897acee23ced
Publikováno v:
Archives of Metallurgy and Materials, Vol vol. 66, Iss No 4, Pp 963-966 (2021)
The Sn-Ag-Cu-based solder paste screen-printing method has primarily been used to fabricate Bi2Te3-based thermoelectric (TE) modules, as Sn-based solder alloys have a low melting temperature (approximately 220℃) and good wettability with Cu electro
Externí odkaz:
https://doaj.org/article/fcc2cd81e1014c4fabdc2f782b0d810d
Publikováno v:
The transactions of The Korean Institute of Electrical Engineers. 72:484-495
Publikováno v:
Archives of Metallurgy & Materials. 2021, Vol. 66 Issue 4, p963-966. 4p.
Publikováno v:
Geo-Congress 2023.
Publikováno v:
Structural Control and Health Monitoring.
To develop countermeasures against the inevitable aging of tunnels, accurate inspection is critical for ensuring stable tunnel services. Tunnels are large-scale infrastructures, whereas the cracks in such tunnels are small-scale objects, necessitatin
Autor:
Seok Jun Kang, Seung Ho Hyun
Publikováno v:
The transactions of The Korean Institute of Electrical Engineers. 70:1129-1138
Publikováno v:
Journal of nanoscience and nanotechnology. 21(8)
The interface reaction between a metal layer and a layer of amorphous indium-gallium-zinc oxide was investigated. Oxygen atoms at the interface bond to the metal atoms and form metal oxide. The reaction depends on the annealing temperature and ambien
Autor:
Yeong Jo Baek, In Hye Kang, Sang Ho Hwang, Ye Lin Han, Min Su Kang, Seok Jun Kang, Seo Gwon Kim, Jae Geun Woo, Eun Seong Yu, Byung Seong Bae
Publikováno v:
Scientific reports. 12(1)
A vertical oxide thin-film transistor was developed with interfacial oxidation for low voltage operation. The gate metal was used as a spacer for the definition of the transistor’s channel as well as the gate electrode. After definition of the vert