Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Seok Ha Lee"'
Autor:
Min-Sun Keel, Young-Chan Kim, Daeyun Kim, Youngsun Oh, Seung Chul Shin, Myunghan Bae, Sungyoung Seo, Sung-Ho Choi, Sunju Hong, S.L. Cho, Yeomyung Km, Young-Gu Jin, Taeun Hwang, Jung-Chak Ahn, Kyoung-Min Koh, Ho Woo Park, Yong Hun Kwon, Seok-Ha Lee, Yi-tae Kim
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
A 2.8μm 4-tap global shutter pixel has been realized for a compact and high-resolution time of flight (ToF) CMOS image sensor. 20,000 e- of high full-well capacity (FWC) per a tap is obtained by employing a supplementary MOS capacitor. 36% of high q
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83f5add5ab4b5497ee814ef0e56440d6
https://doi.org/10.1109/iedm13553.2020.9371950
https://doi.org/10.1109/iedm13553.2020.9371950
Publikováno v:
Journal of Experimental Nanoscience. 9:906-912
We propose a method of forming metal nanoparticles or layers on the oxide by tunnelling current of the EOS (electrolyte–oxide–silicon) system. Electrical characteristics of the metal layer and particles obtained experimentally by the proposed met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bc06bbf5baac3c8547c0bf1b387417b
https://doi.org/10.1080/17458080.2012.742579
https://doi.org/10.1080/17458080.2012.742579
Publikováno v:
IEEE Electron Device Letters. 34:1436-1438
A new concept of device structure that can selectively change the injection carrier type through a thin energy band engineering layer is proposed and demonstrated using the device simulation. As an example, the structure is applied to achieve the n-t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6742598bee677feb19de634fd0fe1a0c
https://doi.org/10.1109/led.2013.2282394
https://doi.org/10.1109/led.2013.2282394
Publikováno v:
Journal of Crystal Growth. 236:635-639
Heteroepitaxial MgO films have been grown on SiC-buffered Si(0 0 1) substrates by chemical vapor deposition using a single source in an ultrahigh vacuum chamber. The crystallinity of the MgO films deposited in the temperature range 600–850°C has b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::748a9dee53855e0db4f9336ab8fe0880
https://doi.org/10.1016/s0022-0248(02)00832-1
https://doi.org/10.1016/s0022-0248(02)00832-1
Autor:
Yu. V. Korostelin, Vladimir I. Kozlovsky, Sung-Nam Lee, A S Nasibov, Seok-Ha Lee, J. Y. Han, P. V. Shapkin, Sung-soo Park
Publikováno v:
Journal of Crystal Growth. :1010-1014
Seeded vapour-phase free growth of ZnSe single crystals at T g = 1100–1250°C in 〈1 0 0〉 direction was studied. The 〈1 0 0〉 growth process was found to be more sensitive to the temperature profile in a furnace than the 〈1 1 1〉 direction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5779355cfc7ad219e85f16d249714fea
https://doi.org/10.1016/s0022-0248(98)80211-x
https://doi.org/10.1016/s0022-0248(98)80211-x
Autor:
Jae Gyeong Lee, Je Hyun Bae, Jin Young Lee, Lilin Piao, Sung Yul Lim, Taek Dong Chung, Seok-Ha Lee, Young June Park, Minjee Seo
Publikováno v:
NATURE COMMUNICATIONS(4)
Silicon dioxide thin films are widely used as dielectric layers in microelectronics and can also be engineered on silicon wafers. It seems counterintuitive that electrochemical reactions could occur on such an insulator without relying on tunnelling
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::417a324054983032fa1388bb080c6680
https://doi.org/10.1038/ncomms3766
https://doi.org/10.1038/ncomms3766
Publikováno v:
Journal of Crystal Growth. 125:175-180
The influence of growth rate, vertical temperature gradient and crystal rotation rate on the interface shape between melt and crystal was investigated to grow high-quality LiNbO 3 single crystals. The growth rate and the vertical temperature gradient
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83d3f2c7267411371e9dac408a356a2a
https://doi.org/10.1016/0022-0248(92)90332-d
https://doi.org/10.1016/0022-0248(92)90332-d
Autor:
Chang-Rok Moon, Jong-Cheol Shin, Jinho Kim, Yun Ki Lee, Young-Joon Cho, Yu-Yeon Yu, Seong-Ho Hwang, Doo-Cheol Park, Byung Jun Park, Hwang-Yoon Kim, Seok-Ha Lee, Jongwan Jung, Seong-Ho Cho, Kangbok Lee, Kwangok Koh, Duckhyung Lee, Kinam Kim
Publikováno v:
2007 IEEE Symposium on VLSI Technology.
A 1.4 μm-pitch pixel of CMOS image sensor, which is the smallest to date, has been successfully developed and integrated into 8M density for the first time. To overcome the crucial degradation of the saturation charge and sensitivity, a novel photod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99a1ac158e718fc1a48f79aed27efb25
https://doi.org/10.1109/vlsit.2007.4339728
https://doi.org/10.1109/vlsit.2007.4339728
Autor:
Chang-Hyo Koo, Hong-ki Kim, Seok-Ha Lee, Kee-Hyun Paik, Sung-Ho Hwang, Jeong-Taek Kong, Chang-Rok Moon, Young-Kwan Park, Keun-Ho Lee, Doo-Chul Park, Duck-Hyung Lee
Publikováno v:
SPIE Proceedings.
Crosstalk of CMOS Image Sensor (CIS) causes degradation of spatial resolution, color mixing and leads to image noise. Crosstalk consists of spectral, optical and electrical components, but definition of each component is obscure and difficult to quan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8117099336121699929921e99add15c5
https://doi.org/10.1117/12.701705
https://doi.org/10.1117/12.701705
Autor:
Jin-Ho Kim, Jongchol Shin, Kang-Bok Lee, Kwang-Ok Koh, Seok-Ha Lee, Jongwan Jung, Duck-Hyung Lee, Doo-Won Kwon, Kinam Kim, Chang-Rok Moon, Hyun-Pil Noh, D. Park, H.S. Jeong
Publikováno v:
2006 International Electron Devices Meeting.
Technology and characteristics of 8-mega density CMOS image sensor (CIS) with unit pixel size of 1.75times1.75mum2 are introduced. With recessed transfer gate (RTG) structure and other sophisticated process/device technology, remarkably enhanced satu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7daa2418a85f65d4932a93f9469ba773
https://doi.org/10.1109/iedm.2006.346975
https://doi.org/10.1109/iedm.2006.346975