Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Seogwoo Lee"'
Publikováno v:
physica status solidi c. 8:2123-2126
Free-standing GaN thick films are successfully fabricated by employing intentional mechanical fracturing of Al2O3 substrates during HVPE growth followed by chemical lift-off of Al2O3 substrates after growth. To do so, thermal stress induced in the Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4a79ded7840f00a140ae21eeccabb12
https://doi.org/10.1002/pssc.201001026
https://doi.org/10.1002/pssc.201001026
Autor:
Jiho Chang, Hyunjae Lee, Gyung-Suk Kil, Jun-Seok Ha, Seogwoo Lee, Yong-gon Seo, Sungmin Whang, Seungwhan Park, Myungwhan Cho, Takafumi Yao, Jinsub Park, Mina Jung, Katsushi Fujii
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:623-626
The authors have studied the photoluminescence (PL) intensities of a-plane (11-20) GaN films (a-GaN) as a function of x-ray rocking-curve (XRC) linewidth values measured in both c- and m-axis directions. PL intensity of well-known luminescence lines
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e513634551d91d57abb61d2d18e2e4d
https://doi.org/10.1116/1.3388889
https://doi.org/10.1116/1.3388889
Autor:
Seogwoo Lee, Jihyun Kim, Sung-Min Hwang, Jeong Tak, Jae Hyoun Park, Sung-Ho Lee, Kwang Hyeon Baik, Hooyoung Song, Junggeun Jhin
Publikováno v:
Journal of the Korean Physical Society. 56:1140-1143
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b56c6f0b1a37c6f3ca1d589c2963cb38
https://doi.org/10.3938/jkps.56.1140
https://doi.org/10.3938/jkps.56.1140
Autor:
Soon-Ku Hong, Hyunjae Lee, Takafumi Kawauchi-jutaku Yao, Jun-Seok Ha, J.H. Chang, Chinkyo Kim, Seogwoo Lee, Meoungwhan Cho, Hyo-Jong Lee
Publikováno v:
Journal of the Korean Physical Society. 54:2404-2408
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c78dc36e5278a36f017774c0ed682528
https://doi.org/10.3938/jkps.54.2404
https://doi.org/10.3938/jkps.54.2404
Autor:
M.W. Cho, Seogwoo Lee, Hyunjae Lee, Hyo-Jong Lee, Katsushi Fujii, Hiroki Goto, Takafumi Yao, Jun-Seok Ha, S.K. Hong
Publikováno v:
Journal of Crystal Growth. 310:920-923
Thick GaN films were grown on two different low-temperature GaN (LT-GaN)-buffer layers, i.e., one- and two-step LT-GaN buffer, by hydride vapor-phase epitaxy (HVPE). NH 4 Cl layer was included in two-step LT-GaN, which was evaluated by X-ray diffract
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61dad3081a9d38a409a1b0cc7b0f45b8
https://doi.org/10.1016/j.jcrysgro.2007.11.105
https://doi.org/10.1016/j.jcrysgro.2007.11.105
Autor:
W. H. Lee, Hyo-Jong Lee, Takashi Hanada, Jun-Seok Ha, Seogwoo Lee, Takafumi Yao, Hyunjae Lee, Scott-S Lee, Takenari Goto, Hiroki Goto, M.W. Cho, Tsutomu Minegishi
Publikováno v:
physica status solidi c. 4:2617-2620
Free-standing GaN layers were successfully prepared by self lift-off process. Single crystalline ZnO buffer layer and GaN layer were successively grown on sapphire substrate by plasma assisted molecular beam epitaxy. Thick GaN film was grown on this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1d636789a91468bf21d027d5c19fa2a
https://doi.org/10.1002/pssc.200674783
https://doi.org/10.1002/pssc.200674783
Publikováno v:
physica status solidi c. 4:116-119
We investigate the effects of inserting defective stress absorbing layer (SAL) in between sapphire substrate and thick GaN layer. A two-step growth technique, in which GaN layers grow at different growth rates in each step, is adopted for growing hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f9a02f36bbdea2efa42b8eeb4154b03
https://doi.org/10.1002/pssc.200673573
https://doi.org/10.1002/pssc.200673573
Autor:
S. K. Hong, Seogwoo Lee, D. C. Oh, Takafumi Yao, J. W. Choi, Meoung Whan Cho, J. E. Shin, Hiroki Goto, Jeong Soo Lee, Jun-Ho Jang, Takashi Hanada, Hyo-Jong Lee, S. R. Cho, Jun-Seok Ha, Jeong-Hyeon Choi, H. Y. Lee
Publikováno v:
physica status solidi c. 4:37-40
In order to understand the origin of leakage current, light emitting devices were grown on two different templates with apparently different dislocation density: one on thin GaN template (∼2 μm) with higher dislocation density (low × 109 cm–2)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::306e2a763bd5230257b6b1fc00616c3c
https://doi.org/10.1002/pssc.200673552
https://doi.org/10.1002/pssc.200673552
Publikováno v:
physica status solidi c. 3:1388-1391
We propose a rocksalt (RS) structured chromium nitride (CrN) layer as a novel buffer for the growth of gallium nitride (GaN) films on c-sapphire substrate. A RS-CrN buffer has good advantages for growing GaN films on c-sapphire from the viewpoints of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38522df9eeeee22854642bec1bcb9369
https://doi.org/10.1002/pssc.200565410
https://doi.org/10.1002/pssc.200565410
Autor:
Jun-Seok Ha, Seogwoo Lee, Kayo Koike, Hyo-Jong Lee, Hyun-Yong Lee, Takafumi Yao, Meoungwhan Cho, Jinsub Park, Soon-Ku Hong, Sung Ryong Cho
Publikováno v:
IEEE Photonics Technology Letters. 24:449-451
Four types of GaN-based light-emitting diodes (LEDs) with V-pits formed in different regions were grown by metal-organic chemical vapor deposition. The position of the V-pits embedded in the layers of the LED structures was controlled by varying the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8554f783b109b3b0f9d4a8fc212b7ad6
https://doi.org/10.1109/lpt.2011.2180523
https://doi.org/10.1109/lpt.2011.2180523