Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Seo-Min Kim"'
Autor:
Taewoo Jung, Sung-Koo Lee, Jaeyeol Kim, Doyoung Kwak, Jihoon Park, Seo-Min Kim, Hyeong-Soo Kim, Jeonqsu Park
Publikováno v:
SPIE Proceedings.
In recent year, the thermal effect has become a critical issue on the operation of memory cell. As heating time or temperature increases, the performances of memory cells are degraded due to its low thermal stabilities. Therefore, processes working a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0d77b35e29d1ef9a05efb2ba3cfc1de
https://doi.org/10.1117/12.2257983
https://doi.org/10.1117/12.2257983
Autor:
Kyung-Suk Suh, Seung-Kee Min, Nam-Joon Lee, Sang Joon Kim, Kyung Goo Lee, Kwang-Woong Lee, Seo Min Kim, Sang Il Min, Jong-Won Ha, Sanghyun Ahn, Dae Do Park
Publikováno v:
Korean Journal of Transplantation. 25:270-275
Background: Simultaneous liver and kidney transplants have proved to be a favorable treatment for combined renal and hepatic end-stage diseases. However, it is extremely difficult to find a simultaneous liver and kidney donor in Korea due to the narr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65f3139e1eff9427b400883deee064ee
https://doi.org/10.4285/jkstn.2011.25.4.270
https://doi.org/10.4285/jkstn.2011.25.4.270
Autor:
Noh-Jung Kwak, Jin-Soo Kim, Young-Sik Kim, Chang-Moon Lim, Sunyoung Koo, Yoonsuk Hyun, Seo-Min Kim, Kyu-Young Kim
Publikováno v:
SPIE Proceedings.
As EUV reaches high volume manufacturing, scanner source power and reticle defectivity attract a lot of attention. Keeping a EUV mask clean after mask production is as essential as producing a clean EUV mask. Even though EUV pellicle is actively inve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cda88cf452bed5643281f14dfa119bee
https://doi.org/10.1117/12.2085626
https://doi.org/10.1117/12.2085626
Autor:
Danilo De Simone, Sarohan Park, Chang-Moon Lim, Seo-Min Kim, Geert Vandenberghe, Zheng Tao, Yoonsuk Hyun
Publikováno v:
SPIE Proceedings.
In this paper, we will present the experimental comparison results on contact holes (CHs) and pillars patterning in EUV lithography with several candidate processes. Firstly, we have compared the normalized image log-slope (NILS), local critical dime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e7ac9e1cf93fc93d9ad0089415de5ff
https://doi.org/10.1117/12.2085920
https://doi.org/10.1117/12.2085920
Autor:
Byounghoon Lee, Sungki Park, Inhwan Lee, Yoonsuk Hyun, Chang-Moon Lim, Seo-Min Kim, Myoung-Soo Kim
Publikováno v:
SPIE Proceedings.
EUV lithography (EUVL) is the most promising technology to extend the resolution limit, and is expected to be used if the enough source power is delivered and mask defect mitigation method is developed. However, even in that case, the number of EUV s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::417b9cb0ce1487619ced2602c2924b5b
https://doi.org/10.1117/12.2048283
https://doi.org/10.1117/12.2048283
Autor:
Jun-Taek Park, Sunyoung Koo, Seo Min Kim, Myoung-Soo Kim, Chang-Nam Ahn, Alek C. Chen, Chang-Moon Lim, Anita Fumar-Pici
Publikováno v:
SPIE Proceedings.
Experimental local CD uniformity (LCDU) of the dense contact-hole (CH) array pattern is statistically decomposed into stochastic noise, mask component, and metrology factor. Each component are compared quantitatively, and traced after etching to find
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::930d0da35419da33be626086612de8f6
https://doi.org/10.1117/12.2048282
https://doi.org/10.1117/12.2048282
Autor:
Jongsu Lee, Kangjoon Seo, Inhwan Lee, Byounghoon Lee, Hyosang Kang, Sunyoung Koo, Kyu-Young Kim, Yoonsuk Hyun, Suk-Kyun Kim, Seo-Min Kim, Myoung-Soo Kim
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
ASML NXE3100 has been introduced for EUV Pre-Production, and ASML NXE3300 for High Volume Manufacturing will be installed from this year. EUV mask defect control is the one of the concerns for introducing EUVL to device manufacturing, for current EUV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9d9b477211241b135565a8fe5642bcc
https://doi.org/10.1117/12.2010091
https://doi.org/10.1117/12.2010091
Autor:
Seung-Chan Moon, Jaeseung Choi, Young-Sun Hwang, Eung-Kil Kang, Jungwoo Park, Chang-Moon Lim, Seo-Min Kim, Jinwoong Kim, Sunyoung Koo
Publikováno v:
SPIE Proceedings.
Double patterning lithography has been one of the candidates for sub-40nm patterning era, and has a lot of process issues to be confirmed. Last year, we presented the issues in double patterning lithography with a real flash gate pattern. Process flo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12b2d778b480ddab02fc5f572aed9a9d
https://doi.org/10.1117/12.712035
https://doi.org/10.1117/12.712035
Autor:
Geun-Young Choi, Dong-Chul Koo, Sungwook Park, Soo-Hyun Kim, Ahn Sang Tae, Ja-Chun Ku, Seo-Min Kim, Hyunchul Sohn, Jae-Kwan Jung, Jinwoong Kim, Nohiung Kwak, Tae-Oh Jung, Jin-Ki Jung, Hyung-Soon Park, Gyu-Hyun Kim
Publikováno v:
2007 IEEE International Interconnect Technology Conferencee.
For the first time, this paper presents the results of successful integrations of Cu wiring into a production 512 Mb/90 nm design-rule stacked capacitor and recessed gate DDR (double data rate) DRAM technology, focusing on the effects of Cu integrati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74ab5cd3fda469c1062312fed8ccf200
https://doi.org/10.1109/iitc.2007.382367
https://doi.org/10.1109/iitc.2007.382367
Publikováno v:
SPIE Proceedings.
There have been imposed quite incompatible requirements on lithographic simulation tool for OPC, that is it should be enough accurate and enough fast. Though diffused aerial image model (DAIM) has achieved these goals successfully, rapid transition o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b130f382144b341e4689735bf2ecd8a4
https://doi.org/10.1117/12.656923
https://doi.org/10.1117/12.656923