Zobrazeno 1 - 10
of 322
pro vyhledávání: '"Seo, Jung‐Hun"'
Autor:
Vidrio, Ricardo, Vincent, Daniel, Bachman, Benjamin, Saucedo, Cesar, Zahedian, Maryam, Xu, Zihong, Lai, Junyu, Grotjohn, Timothy A., Kolkowitz, Shimon, Seo, Jung-Hun, Hamers, Robert J., Ray, Keith G., Ma, Zhenqiang, Choy, Jennifer T.
The efficacy of oxygen (O) surface terminations on diamond is an important factor for the performance and stability for diamond-based quantum sensors and electronics. Given the wide breadth of O-termination techniques, it can be difficult to discern
Externí odkaz:
http://arxiv.org/abs/2304.02217
Autor:
Makutu, Douxdoux Kumakele, Seo, Jung Hun, Lee, Bum Han, Lee, Tong Ha, Ngwayaya Makutu, Adalbert-Jules Ma, Kanika, Thomas Mayena, Ongendangenda, Albert Tienge, Makoka, Frederic Muanza, Guillong, Marcel
Publikováno v:
In Ore Geology Reviews December 2024 175
Autor:
Lai, Junyu, Seo, Jung-Hun
In this paper, a transient delayed rising and fall time of $\beta$-Ga$_2$O$_3$ NMs Schottky barrier diodes (SBDs) formed on four different substrates (diamond, Si, sapphire, and polyimide) were measured using a sub-micron second resolution time-resol
Externí odkaz:
http://arxiv.org/abs/2202.11179
Autor:
Hasan, Md Nazmul, Zheng, Yixiong, Lai, Junyu, Swinnich, Edward, Licata, Olivia Grace, Baboli, Mohadeseh A., Mazumder, Baishakhi, Mohseni, Parsian K., Seo, Jung-Hun
The structure property of non-ideal Si/GaAs heterostructures that were integrated with the ultra-thin oxide (UO) tunneling interfacial layer has been systematically investigated. Si nanomembranes (NMs) were oxidized in different time periods prior to
Externí odkaz:
http://arxiv.org/abs/2110.12496
Autor:
Hasan, Md Nazmul, Zheng, Yixiong, Lai, Junyu, Swinnich, Edward, Licata, Olivia Grace, Baboli, Mohadeseh A., Mazumder, Baishakhi, Mohseni, Parsian K., Seo, Jung-Hun
We have successfully demonstrated Si/GaAs p-n heterostructures using Al2O3 ultra-thin oxide interfacial layers. The band diagram and band offsets were investigated using X-ray photoelectron spectroscopy and confirm a small discontinuity in the conduc
Externí odkaz:
http://arxiv.org/abs/2107.06983
In this paper, we have built a numerical p-n Si/GaAs heterojunction model using a quantum-mechanical tunneling theory with various quantum tunneling interfacial materials including two-dimensional semiconductors such as hexagonal boron nitride (h-BN)
Externí odkaz:
http://arxiv.org/abs/2107.01625
Autor:
Yu, Zhonghai, Wei, Xiucheng, Zheng, Yixiong, Hui, Haolei, Bian, Mengying, Dhole, Samyak, Seo, Jung-Hun, Sun, Yi-Yang, Jia, Quanxi, Zhang, Shengbai, Yang, Sen, Zeng, Hao
Owing to its superior visible light absorption and high chemical stability, chalcogenide perovskite barium zirconium sulfide has attracted significant attention in the past few years as a potential alternative to hybrid halide perovskites for optoele
Externí odkaz:
http://arxiv.org/abs/2102.10486
Autor:
Zheng, Yixiong, Feng, Zixuan, Bhuiyan, A F M Anhar Uddin, Meng, Lingyu, Dhole, Samyak, Jia, Quanxi, Zhao, Hongping, Seo, Jung-Hun
In this paper, we have demonstrated the large-size free-standing single-crystal b-Ga2O3 NMs fabricated by the hydrogen implantation and lift-off process directly from MOCVD grown b-Ga2O3 epifilms on native substrates. The optimum implantation conditi
Externí odkaz:
http://arxiv.org/abs/2102.06297
Autor:
Liu, Dong, Cho, Sang June, Seo, Jung-Hun, Kim, Kwangeun, Kim, Munho, Shi, Jian, Yin, Xin, Choi, Wonsik, Zhang, Chen, Kim, Jisoo, Baboli, Mohadeseh A., Park, Jeongpil, Bong, Jihye, Lee, In-Kyu, Gong, Jiarui, Mikael, Solomon, Ryu, Jae Ha, Mohseni, Parsian K., Li, Xiuling, Gong, Shaoqin, Wang, Xudong, Ma, Zhenqiang
Semiconductor heterostructure is a critical building block for modern semiconductor devices. However, forming semiconductor heterostructures of lattice-mismatch has been a great challenge for several decades. Epitaxial growth is infeasible to form ab
Externí odkaz:
http://arxiv.org/abs/1812.10225
Autor:
Liu, Dong, Cho, Sang June, Park, Jeongpil, Seo, Jung-Hun, Dalmau, Rafael, Zhao, Deyin, Kim, Kwangeun, Kim, Munho, Lee, In-Kyu, Albrecht, John D., Zhou, Weidong, Moody, Baxter, Ma, Zhenqiang
Publikováno v:
published: Appl. Phys. Lett. 112, 081101 (2018)
Ultraviolet (UV) light emission at 229 nm wavelength from diode structures based on AlN/Al0.77Ga0.23N quantum wells and using p-type Si to significantly increase hole injection was reported. Both electrical and optical characteristics were measured.
Externí odkaz:
http://arxiv.org/abs/1708.03973