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pro vyhledávání: '"Seo, Gyeongseob"'
Autor:
Cho, Sungjun, Kim, Beomjun, Cho, Hyunuk, Seo, Gyeongseob, Mutlu, Onur, Kim, Myungsuk, Park, Jisung
This work investigates a new erase scheme in NAND flash memory to improve the lifetime and performance of modern solid-state drives (SSDs). In NAND flash memory, an erase operation applies a high voltage (e.g., > 20 V) to flash cells for a long time
Externí odkaz:
http://arxiv.org/abs/2404.10355
Autor:
Kim, Beomjun1 (AUTHOR), Seo, Gyeongseob1 (AUTHOR), Kim, Myungsuk1 (AUTHOR) beomjun0816@knu.ac.kr
Publikováno v:
Eng. Mar2024, Vol. 5 Issue 1, p495-512. 18p.