Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Senthil kumar Nagarajan"'
Autor:
A. Ram Kumar, S. Selvaraj, P. Rajkumar, J. Dhanalakshmi, Mohanraj Kumar, Senthil Kumar Nagarajan, P. Jayaprakash, G.P. Sheeja Mol, Shikha Awasthi, Sarvesh Kumar Pandey
Publikováno v:
Chemical Physics Impact, Vol 8, Iss , Pp 100443- (2024)
The safrole and isosafrole are constitutional isomers that have been theoretically characterized utilizing Density Functional Theory (DFT) employed with the B3LYP/6-311++G(d,p) basis set to simulate geometrical parameters, vibrational aspects, electr
Externí odkaz:
https://doaj.org/article/0457f79e2b5a46e1825f036ea717f2b8
Autor:
Yu-Hsuan Lin, Chandrasekar Sivakumar, Babu Balraj, Gowtham Murugesan, Senthil Kumar Nagarajan, Mon-Shu Ho
Publikováno v:
Nanomaterials, Vol 13, Iss 4, p 754 (2023)
The non-enzymatic glucose sensing response of pure and Ag-decorated vertically aligned ZnO nanorods grown on Si substrates was investigated. The simple low-temperature hydrothermal method was employed to synthesize the ZnO NRs on the Si substrates, a
Externí odkaz:
https://doaj.org/article/4fdb38d04c564cc8a0ebf93bbd3efa35
Autor:
Thangabalu Subramani, Govindaraj Thimmarayan, Babu Balraj, Narendhar Chandrasekar, Matheswaran Palanisamy, Senthil Kumar Nagarajan, Saranya Amirtharajan, Mohanraj Kumar, Chandrasekar Sivakumar
Publikováno v:
Inorganic Chemistry Communications. 142:109709
Autor:
Mohanbabu Bharathi, Pei-Fang Chung, Chandrasekar Sivakumar, Senthil kumar Nagarajan, Babu Balraj, Mon-Shu Ho
Publikováno v:
Materials Letters. 308:131123
In recent years, the non-volatile resistive random-access memory (ReRAM) has been investigated for next-generation memory devices to fulfill the limitations of commercial transistor-based memory devices. Every now and then, peculiar nanostructures wi
Autor:
Mon-Shu Ho, Donghui Guo, Chandrasekar Sivakumar, Senthil kumar Nagarajan, Mohanraj Kumar, Pei-Fang Chung, Babu Balraj, Mohanbabu Bharathi
Publikováno v:
Journal of Alloys and Compounds. 885:161012
The need of finding novel functional nanostructured materials to produce cost effective, reliable and high-performance devices are crucial for the future developments. Since the conventional memory technology struggles in various aspects of quantum m
Autor:
Santhosh P; Department of Industrial Chemistry, Alagappa University, Karaikudi, India., Senthil Kumar N, Renukadevi M, Gopalan AI, Vasudevan T, Lee KP
Publikováno v:
Analytical sciences : the international journal of the Japan Society for Analytical Chemistry [Anal Sci] 2007 Apr; Vol. 23 (4), pp. 475-8.