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pro vyhledávání: '"Senthil Srinivasan"'
Autor:
Aram Senthil Srinivasan, R., Meenakshi, R., Amudhavalli, A., Rajeswara Palanichamy, R., Iyakutti, K., Kawazoe, Y.
Publikováno v:
In Computational Condensed Matter December 2024 41
Akademický článek
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Autor:
Aram Senthil Srinivasan, R.1 aramsenthil@gmail.com, Meenakshi, R.2
Publikováno v:
Journal of Advanced Scientific Research. Nov2021, Vol. 12 Issue 4, p199-204. 6p.
Autor:
Meenakshi, R.1 (AUTHOR), Aram Senthil Srinivasan, R.2 (AUTHOR), Amudhavalli, A.3 (AUTHOR), Rajeswarapalanichamy, R.3 (AUTHOR) rrpalanichamy@gmail.com, Iyakutti, K.4 (AUTHOR)
Publikováno v:
Phase Transitions. Jun-Aug2021, Vol. 94 Issue 6-8, p415-435. 21p.
Publikováno v:
Journal of Advanced Scientific Research. 12:199-204
Coronavirus infection has spread worldwide and is posing a public health crisis on a global scale. Even though the World Health Organization first claimed to have complete control over the virus, the infection has taken the lives of more than 35 lakh
Publikováno v:
Journal of Advanced Scientific Research. 12:162-166
The exponential increase in coronavirus infection has created a catastrophe. India is witnessing a very difficult period because all ages, including young people and children, are affected by the second wave. The overburdened Medicare system in India
Autor:
Senthil Srinivasan, R. Aram1 aramsenthil@gmail.com, Meenakshi, R.2
Publikováno v:
Journal of Advanced Scientific Research. Sep2020 Special issue, Vol. 11, p176-180. 5p.
Autor:
R. Aram Senthil Srinivasan, A. Amudhavalli, K. Iyakutti, R. Meenakshi, R. Rajeswarapalanichamy
Publikováno v:
Phase Transitions. 94:415-435
The properties such as structural, mechanical, electronic structure, magnetic, optical and transport properties of the half-Heusler alloys of Rhodium RhFeZ(Z = P, As, Sb, Sn, Si, Ge, Ga, In, Al) ar...
Autor:
Senthil Srinivasan, V.S., Pandya, Arun
Publikováno v:
In Thin Solid Films 2011 520(1):574-577
Autor:
Senthil Srinivasan Vadakupudhupalayam, Pawan Kumar, Erlend Rolseth, Robin Khosla, Jörg Schulze, Satinder K. Sharma
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 17:80-89
For Al2O3 charge trapping analysis, Metal/Al2O3/SiO2/Si (MAOS) structures are fabricated from atomic layer deposition and plasma enhanced chemical vapor deposition-based Al2O3 and SiO2 thin films, respectively. The fabricated MAOS devices showed high