Výsledky vyhledávání - "Senkov, V. M."

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Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

Autor: Yuryev, V. A., Chizh, K. V., Chapnin, V. A., Mironov, S. A., Dubkov, V. P., Uvarov, O. V., Kalinushkin, V. P., Senkov, V. M., Nalivaiko, O. Y., Novikau, A. G., Gaiduk, P. I.

Publikováno v: J. Appl. Phys. 117, 204502 (2015)

Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide

Externí odkaz: http://arxiv.org/abs/1503.05700

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Investigation of quantum-dimensional structure parameters by X-ray optical, scanning tunneling and transmission electron microscopy

Autor: Touryanski, A. G., Senkov, V. M., Gizha, S. S., Arapkina, L. V., Chapnin, V. A., Chizh, K. V., Kalinushkin, V. P., Storozhevykh, M. S., Uvarov, O. V., Yuryev, V. A.

Publikováno v: Proc. 21th Int. Symp. "Nanostructures: Physics and Technology", Saint Petersburg, Russia, June 24-28, 2013; Academic University Publishing, St. Petersburg, Russia, 2013, pp. 166-167

Application of the two-wavelength X-ray reflectometry to exploration of Ge/Si(001) hereostructures with dense chains of stacked Ge quantum dots is presented
Comment: 21st Int. Symp. "Nanostructures: Physics and Technology"; Saint Petersburg, Rus

Externí odkaz: http://arxiv.org/abs/1304.0955

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