Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Senjuti Khanra"'
Autor:
Senjuti Khanra
Publikováno v:
Renewable Resources and Energy Management ISBN: 9781003361312
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff6785a6caab91339e1efbec6b630dca
https://doi.org/10.1201/9781003361312-51
https://doi.org/10.1201/9781003361312-51
Publikováno v:
2022 URSI Regional Conference on Radio Science (USRI-RCRS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f395d263fcf83b542291d876b0c53ee8
https://doi.org/10.23919/ursi-rcrs56822.2022.10118575
https://doi.org/10.23919/ursi-rcrs56822.2022.10118575
Autor:
Senjuti Khanra
Publikováno v:
Computers and Devices for Communication ISBN: 9789811583650
A small signal equivalent circuit model of uni-traveling carrier photodiode (UTC-PD) is developed from integral carrier density rate equation and parasitics are included with it. The technique to obtain scattering parameters from circuit model is giv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47bec638836feaba5b4450a0810a351a
https://doi.org/10.1007/978-981-15-8366-7_44
https://doi.org/10.1007/978-981-15-8366-7_44
Publikováno v:
Optical and Quantum Electronics. 49
An equivalent circuit model of uni-traveling carrier photodiode (UTC-PD) is developed from integral carrier density rate equation and few important properties of the device such as the electrical and optical characteristics are evaluated by employing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3391db8a0079a81a31a1a1900770da2
https://doi.org/10.1007/s11082-017-1205-2
https://doi.org/10.1007/s11082-017-1205-2
Autor:
Senjuti Khanra, Abhirup Das Barman
Publikováno v:
Optical and Quantum Electronics. 47:1397-1405
An electrical equivalent circuit model of InGaAs/InP uni-travelling carrier photodiode (UTC-PD) is presented. The model is suitable to be built on any electrical circuit simulator to optimize the design parameters of the device. Its performance in te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b2e31b96a0334aa42b956de913ee8c2
https://doi.org/10.1007/s11082-014-0094-x
https://doi.org/10.1007/s11082-014-0094-x
Autor:
Abhirup Das Barman, Senjuti Khanra
Publikováno v:
2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).
A time domain model of bulk InGaAs/InP uni-traveling carrier photodiode is developed in terms of coupled differential equations of incident photon flux and photo generated carrier density rates. For fast computation of model parameters linear approxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::054424e5368f2d75588b72e58dfb3307
https://doi.org/10.1109/nusod.2015.7292883
https://doi.org/10.1109/nusod.2015.7292883
Autor:
Senjuti Khanra, Abhirup Das Barman
Publikováno v:
SPIE Proceedings.
A traveling wave time domain model of bulk InGaAs/InP uni-traveling carrier photodiode is presented in terms of integral carrier density rate equation. The wavelength dependent responsivity at different absorption width has been derived from quantum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d093fcf945ba3385a140654a10905606
https://doi.org/10.1117/12.2192139
https://doi.org/10.1117/12.2192139
Autor:
Anirban Sadhu, Sumita Sinha, Debabrata Maity, Alpana De Bose, Senjuti Khanra, Swagata Bhattacharya
Publikováno v:
Journal of the Anatomical Society of India. 66:S62
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b760e65fc4b5c7c5351a42c2f5ff60f
https://doi.org/10.1016/j.jasi.2017.08.197
https://doi.org/10.1016/j.jasi.2017.08.197
Autor:
Senjuti Khanra, Abhirup Das Barman
Publikováno v:
Numerical Simulation of Optoelectronic Devices, 2014.
An electrical equivalent circuit model of InGaAs/InP uni travelling carrier photodiode is presented. The model is suitable to be built on any electrical circuit simulator to perform design and optimize the device parameters. We have shown a novel tec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a78933f3b4a61bed1b78cf94adcdbffe
https://doi.org/10.1109/nusod.2014.6935371
https://doi.org/10.1109/nusod.2014.6935371
Autor:
Abhirup Das Barman, Senjuti Khanra
Publikováno v:
2013 International Conference on Microwave and Photonics (ICMAP).
This paper proposes a method of linearity analysis of uni-traveling carrier photodiode (UTC-PD) by using an electrical circuit model of the device. Based on this circuit, third order inter-modulation products are investigated by employing two tone in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a72ff5b0363cdcf190cdbb780a13249
https://doi.org/10.1109/icmap.2013.6733552
https://doi.org/10.1109/icmap.2013.6733552