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pro vyhledávání: '"Seng Nguon Ting"'
Autor:
Srikanth Samavedam, Hsien-Ching Lo, Shashidhar Shintri, Jianwei Peng, Seong Yeol Mun, Seng Nguon Ting, Ma Wei, El Mehdi Bazizi, C. Gaire, James Chen, Edward Reis, Baofu Zhu, Qi Yi, Owen Hu
Publikováno v:
IEEE Transactions on Electron Devices. 65:3640-3645
We present a novel method to form the source/ drain (S/D) cavity for pFET performance improvement—we named this cavity as doping-assisted cavity as its profile is controlled by the lightly doped drain implantation. By utilizing the enhanced etch ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::759c639d709cdea125b9e0c80170bb21
https://doi.org/10.1109/ted.2018.2856770
https://doi.org/10.1109/ted.2018.2856770
Publikováno v:
International Symposium for Testing and Failure Analysis.
With rapid scaling of semiconductor devices, new and more complicated challenges emerge as technology development progresses. In SRAM yield learning vehicles, it is becoming increasingly difficult to differentiate the voltage-sensitive SRAM yield los
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf92be865a4c91888cab3bb1522b9d1d
https://doi.org/10.31399/asm.cp.istfa2018p0300
https://doi.org/10.31399/asm.cp.istfa2018p0300
Akademický článek
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