Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Sen-Hou Ko"'
Publikováno v:
ECS Transactions. 19:83-90
The requirements for copper post-CMP cleaning include slurry particle removal, organic residue removal, metal contamination reduction, water mark elimination, copper corrosion prevention, and low-k surface change minimization. The difficulty in meeti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ee130419199291efd72d92bacc4afa4
https://doi.org/10.1149/1.3123777
https://doi.org/10.1149/1.3123777
Publikováno v:
Journal of Applied Physics. 71:5892-5896
Thin CoSi2 films (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9f48d8073b936f747e307dc1c6121bb
https://doi.org/10.1063/1.350487
https://doi.org/10.1063/1.350487
Autor:
Yuri Uritsky, Chris Ngai, Chorng-Ping Chang, Motoya Okazaki, Yufei Chen, Mani Thothadri, Paul V. Miller, Manjari Dutta, Deenesh Padhi, Wendy H. Yeh, Raymond Maas, Chris Lazik, Sen-Hou Ko, Stephan Sinkwitz, Martin Jay Seamons, Abraham Anapolsky
Publikováno v:
SPIE Proceedings.
The objective of this study was to examine the defect reduction effect of the wafer edge polishing step on the immersion lithography process. The experimental wafers were processed through a typical front end of line device manufacturing process and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98dca7331dce13eb97c78ea980795e05
https://doi.org/10.1117/12.773113
https://doi.org/10.1117/12.773113
Publikováno v:
Journal of Materials Research. 5:202-205
The refractive index of the surface of a zirconium fluoride glass was increased by exchanging fluorine in the glass with gaseous chlorine. The chlorine profile in the glass surface, as measured by Rutherford backscattering, was that expected for diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dce3ca3481a65e2eb273377e6cb4918a
https://doi.org/10.1557/jmr.1990.0202
https://doi.org/10.1557/jmr.1990.0202
Publikováno v:
2006 IEEE International Symposium on Semiconductor Manufacturing.
The growth of the flash memory market is driving the priority for new cost reduction methods for tungsten CMP. This paper focuses on productivity enhancements that boost the wafer throughput by 82% while achieving good results for topography, rate st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4b595f039eec2359badd6930101cfdf
https://doi.org/10.1109/issm.2006.4493059
https://doi.org/10.1109/issm.2006.4493059
Publikováno v:
MRS Proceedings. 337
Chemical Mechanical polishing (CMP) is a useful technique for achieving global planarization in the ICs. The CMP of oxide has been used and studied for decades. Only recently the technique has been employed for planarizing the interlayer dielectric (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2441310aefbaa225e8a520f82c42a21f
https://doi.org/10.1557/proc-337-157
https://doi.org/10.1557/proc-337-157
Publikováno v:
2006 IEEE International Symposium on Semiconductor Manufacturing; 2006, p195-198, 4p
Publikováno v:
Journal of Materials Research. 3:989-995
The crystallizing phases from a BaZn YbTh fluoride glass were a BaYbTh fluoride, ZnF2, and YbF3, as identified with x-ray diffraction and composition-enhanced scanning electron microscopy. Blocky BaYbTh fluoride crystallizes first, at about 450 °C,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0314274d64c943d9b9dda029ed62d35
https://doi.org/10.1557/jmr.1988.0989
https://doi.org/10.1557/jmr.1988.0989
Conference
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Conference
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