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pro vyhledávání: '"Semyon D. Savransky"'
Autor:
Semyon D. Savransky
Publikováno v:
INCOSE International Symposium. 9:1072-1079
The weak point of traditional methods of innovation management is transformation of customer needs to the concept of new technique. Usually some creativity methods are used, but most of such methods cannot guaranty optimal result. TRIZ is a methodolo
Autor:
Guy C. Wicker, Semyon D. Savransky
Publikováno v:
MRS Proceedings. 1251
The results of calorimetric and electrical studies of bulk Ge2Sb2Te5 and GeSb2Te4 alloys around melting temperature Tm are presented together with characteristics of phase-change memory devices from such alloys. The endothermic melting region is wide
Autor:
Ilya V. Karpov, Semyon D. Savransky
Publikováno v:
MRS Proceedings. 1072
New technique to separate bulk and interface electrical properties of polycrystalline and glassy Ge2Sb2Te5 (GST) in phase-change memory (PCM) devices is proposed. PCM with different GST thicknesses are measured. The average activation energies for bu
Autor:
J.P. Reifenberg, Sean Jong Lee, B.G. Johnson, S.J. Hudgens, Ilya V. Karpov, Semyon D. Savransky, Jingyan Zhang, DerChang Kau, David L. Kencke, Martin D. Giles, Gianpaolo Spadini
Publikováno v:
2007 IEEE International Electron Devices Meeting.
Phase change memory (PCM) research has largely focused on bulk properties to evaluate cell efficiency. Now both electrical and thermal interface resistances are characterized and shown to be critical for understanding power in a novel damascene-GST c
Autor:
Semyon D. Savransky, Eugenio Prokhorov
Publikováno v:
MRS Proceedings. 918
Initial attempts to create memory from chalcogenide glasses (g-Ch) had limited success particularly because the first generation of these materials (labeled as CG1) has inferior endurance (about 106 SET-RESET cycles). Recent progress in phase-change
Autor:
Semyon D. Savransky
Publikováno v:
Engineering of Creativity: Introduction to TRIZ Methodology of Inventive Problem Solving
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef7d39268952b30223b31e5b20f18d60
https://doi.org/10.1201/9781420038958.ax2
https://doi.org/10.1201/9781420038958.ax2
Autor:
Semyon D. Savransky
Publikováno v:
MRS Proceedings. 378
The creation of negative-U defects (NUD) is a spin-dependent process, that could be used for getting information about NUD themselves; and the NUD destruction is accompanied by the Coulomb’s repulsion between charge carriers.
Autor:
Semyon D. Savransky
Invention and innovation lie at the heart of problem solving in virtually every discipline, but they are not easy to come by. Divine inspiration aside, historically we have depended primarily on observation, brainstorming, and trial-and-error methods