Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Semsettin Altindal"'
Autor:
Jaafar Abdulkareem Mustafa Alsmael, Serhat Orkun Tan, Habibe Uslu Tecimer, Semsettin Altindal, Yashar Azizian Kalandaragh
Publikováno v:
IEEE Transactions on Nanotechnology. 21:528-533
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71b4959b8e9d83ade1b767a41aa9d5e4
https://doi.org/10.1109/tnano.2022.3207900
https://doi.org/10.1109/tnano.2022.3207900
Publikováno v:
IEEE Sensors Journal
Sensitivity ( S ) and drive mode are crucial issues for the vertical metal-oxide-semiconductor (MOS) type diode applied in temperature sensing. In this study, experimentally, we indicated that the S values of the Ni(50 nm) - Au(100 nm) /Ga2O3/ p -Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb7c3f11eb4c29e36951a21338201b40
https://hdl.handle.net/11693/111906
https://hdl.handle.net/11693/111906
The vertical Schottky barrier diode (SBD)-based temperature sensors with the drive modes are a significant issue with more advantageous than the on-chip sensor. The sensitivity (S) and the current conduction mechanisms (CCMs) of the vertical cadmium
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eccbe79fda42ca250665b7b14399f3e4
http://hdl.handle.net/11467/6140
http://hdl.handle.net/11467/6140
Autor:
Selçuk Demirezen, Murat Ulusoy, Haziret Durmuş, Halit Cavusoglu, Kurtuluş Yılmaz, Şemsettin Altındal
Publikováno v:
ACS Omega, Vol 8, Iss 49, Pp 46499-46512 (2023)
Externí odkaz:
https://doaj.org/article/c5ca0f551b5d43b48ff606526177ca9b
Autor:
Ali Barkhordari, Hamid Reza Mashayekhi, Pari Amiri, Süleyman Özçelik, Şemsettin Altındal, Yashar Azizian-Kalandaragh
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-18 (2023)
Abstract In this research, for some different Schottky type structures with and without a nanocomposite interfacial layer, the current–voltage (I–V) characteristics have been investigated by using different Machine Learning (ML) algorithms to pre
Externí odkaz:
https://doaj.org/article/1ff287148b964e93b455609ce0fc633d
Autor:
Elif Orhan, Aslıhan Anter, Murat Ulusoy, Barış Polat, Can Okuyucu, Mustafa Yıldız, Şemsettin Altındal
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 8, Pp n/a-n/a (2023)
Abstract Carbon, especially graphene quantum dots (GQDs) based electronics have become an attractive technology in recent years. The controlled modification of the electrical and optoelectronic properties of GQDs by physical/chemical processes or syn
Externí odkaz:
https://doaj.org/article/3a980eecfa894ac88b4ba7d702bbd758
Akademický článek
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Publikováno v:
Engineering Science and Technology, an International Journal, Vol 27, Iss , Pp 101017- (2022)
The letter reports that the impedance spectroscopy method has been performed to acquire impeccable results on the ac electric conductivity (σac), dielectric (ε′ and ε′′) and electric modulus (M' and M'') components of the Al/Al2O3/p-Si type
Externí odkaz:
https://doaj.org/article/8a916ac6d5a74553974d9c234bf39143
Publikováno v:
Semiconductor Science & Technology; Jul2009, Vol. 24 Issue 7, p075003-075003, 1p
The distribution of the barrier height in Al-TiW-Pd2Si/n-Si Schottky diodes from I-V-T measurements.
Publikováno v:
Semiconductor Science & Technology; Mar2008, Vol. 23 Issue 3, p35003-35003, 1p