Engineering insights into heater design for oxygen reduction in CZ silicon growth

Autor: Amir Reza Ansari Dezfoli

Publikováno v: Case Studies in Thermal Engineering, Vol 65, Iss , Pp 105596- (2025)

Oxygen impurity is unavoidable during the Czochralski (CZ) growth of single silicon crystals. Currently, there are costly methods to control oxygen levels in the final silicon crystal, such as using magnets or high-quality crucibles. This paper propo

Externí odkaz: https://doaj.org/article/5d3cc74f85e1432388a5866db2908916

Trimethylaluminum and borane complexes of primary amines

Autor: Balázs Németh, Jean-Claude Guillemin, Tamás Veszprémi, Jean Paul Guegan

Publikováno v: Inorganic Chemistry
Inorganic Chemistry, American Chemical Society, 2013, 52 (1), pp.346-54. ⟨10.1021/ic302091t⟩
Inorganic Chemistry, 2013, 52 (1), pp.346-54. ⟨10.1021/ic302091t⟩

International audience; Trimethylaluminum (TMA) complexes of methyl-, n-propyl-, cyclopropyl-, allyl-, and propargylamine were synthesized and their experimental properties and theoretical characteristics were compared with the respective amine-boran

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::842857927aacd756eace94896028475c
https://hal.archives-ouvertes.fr/hal-00806051

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The growth and characterization of II-VI semiconductor thin films

Autor: Patterson, A. M.

Externí odkaz: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.378320