Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Semiconductor Science and Technology"'
Autor:
E. Eustache, Bassem Salem, M. A. Mahjoub, Youssouf Guerfi, Jean-Michel Hartmann, J. Aubin, S. David, Sébastien Labau, Franck Bassani
Publikováno v:
Semiconductor Science and Technology
Semiconductor Science and Technology, 2021, 36 (6), pp.065018. ⟨10.1088/1361-6641/abfbb5⟩
Semiconductor Science and Technology, IOP Publishing, 2021, 36 (6), pp.065018. ⟨10.1088/1361-6641/abfbb5⟩
Semiconductor Science and Technology, 2021, 36 (6), pp.065018. ⟨10.1088/1361-6641/abfbb5⟩
Semiconductor Science and Technology, IOP Publishing, 2021, 36 (6), pp.065018. ⟨10.1088/1361-6641/abfbb5⟩
We report on the nanopatterning of horizontal and vertical germanium-tin (Ge1−x Sn x or GeSn) nanowires by inductively coupled plasma reactive ion etching for gate-all-around field effect transistors. First, a chlorine based chemistry has been inve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb3ebed34affc89a69b505b22612ed08
https://hal.science/hal-03375044
https://hal.science/hal-03375044
Publikováno v:
Semiconductor Science and Technology. 31:035022
We investigated the optical properties of disordered In0.52Ga0.48P alloys by spectroscopic ellipsometry in the far-infrared to ultraviolet energy range (0.037–5.1 eV). The alloys were grown on Ge (100) substrate by solid-source molecular beam epita
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b75059a7e434f7ef21984cd5f0c53ef5
https://doi.org/10.1088/0268-1242/31/3/035022
https://doi.org/10.1088/0268-1242/31/3/035022
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