Zobrazeno 1 - 10
of 8 989
pro vyhledávání: '"Semiconductor Device Modeling"'
Autor:
G. P. S. Prashanthi, Umakanta Nanda
Publikováno v:
IEEE Access, Vol 12, Pp 114995-115005 (2024)
Elpasolites are expected to be promising photovoltaic semiconductor alternatives to lead-based perovskite semiconductors. Concern over the stability and toxicity of lead halide perovskites has led to an increase in interest in the environmental frien
Externí odkaz:
https://doaj.org/article/240cda3d38eb4039bdea8027f2ce70b9
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 201-210 (2024)
In this work, for the first time, a machine learning behavioral modeling methodology based on gate recurrent unit (GRU) is developed and used to model and then analyze the kink effects (KEs) in the output reflection coefficient $(S_{22})$ and the sho
Externí odkaz:
https://doaj.org/article/c0ed1c01d72b468fb27c1aa3558028dc
Autor:
Maximilian Reuter, Andreas Kramer, Dakyung Lee, Jens Trommer, Niladri Bhattacharjee, Giulio Galderisi, Thomas Mikolajick, Klaus Hofmann
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 56-64 (2024)
Circuit design requires fast and scalable models which are compatible to modern electronic design automation tools. For this task typically analytical compact models are preferred. However, for emerging device concepts with altered conduction mechani
Externí odkaz:
https://doaj.org/article/db374d8dcd9d4415a16e110c05bda59f
Publikováno v:
Applied Sciences, Vol 14, Iss 16, p 7186 (2024)
In this paper, a novel method is presented to estimate the parameters of the SPICE-like multi-domain model of light-emitting diode (LED) chips developed and proposed by the Delphi4LED project. The proposed estimation algorithm employs a modified Neld
Externí odkaz:
https://doaj.org/article/dbf4aa1833094c99a69aad5e45f63dc7
Autor:
Radaoui, M.1,2 addaouimoufid@gmail.com, Saidani, M. A.1, Fredj, A. Ben1, Romdhane, S.1,3, Havlicek, M.2, Egbe, D. A. M.2, Sariciftci, N. S.2, Bouchriha, H.1
Publikováno v:
Journal of Applied Physics. 2014, Vol. 116 Issue 18, p183901-1-183901-9. 9p. 1 Diagram, 2 Charts, 10 Graphs.
Autor:
Gerardo Malavena, Mattia Giulianini, Luca Chiavarone, Alessandro S. Spinelli, Christian Monzio Compagnoni
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 524-530 (2023)
In this paper, we present a detailed experimental investigation of high-temperature data retention in 3D floating-gate NAND Flash memory arrays. Data reveal that charge detrapping from the cell tunnel oxide and depassivation of traps in the string po
Externí odkaz:
https://doaj.org/article/6397aec38f21473f9cfd0251938db086
Autor:
Ao Zhang, Jianjun Gao
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 347-353 (2023)
Scalable small signal and noise modeling for 90nm InP high electron mobility transistor (HEMT) is proposed in this paper. Analytical expressions for the noise parameters of the intrinsic part are derived from an accurate small signal and noise equiva
Externí odkaz:
https://doaj.org/article/539e39c28d5d4c12b3f2ad547d3a3da4
Publikováno v:
IEEE Access, Vol 11, Pp 52790-52811 (2023)
Differential inverters develop the PWM of internal DC-DC modules by correlating fundamental frequency of load with high switching frequency to maintain inherent characteristic operation and achieve pure higher/lower AC output voltage with smaller siz
Externí odkaz:
https://doaj.org/article/a24b93d3044543489310c4a7b1f521c1
Akademický článek
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Autor:
Fourches, Nicolas Thierry1
Publikováno v:
IEEE Transactions on Electron Devices. Apr2017, Vol. 64 Issue 4, p1619-1623. 5p.