Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Semiconducting selenium compounds"'
Autor:
H. Bayramoglu, Ahmet Peksoz
Publikováno v:
Materials Science in Semiconductor Processing. 90:13-19
CdSe semiconductor thin films were grown on indium tin oxide (ITO) coated glass substrates by co-electrochemical deposition method. Deposition potential was kept at - 0.95 V vs. Ag/AgCl reference electrode for ten minutes. Deposition electrolyte incl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a3f904cc5e8e2824a5b8f35c7bb4dcd
https://doi.org/10.1016/j.mssp.2018.09.021
https://doi.org/10.1016/j.mssp.2018.09.021
Publikováno v:
2d Materials, 8, 4, pp. 1-8
2d Materials, 8, 1-8
2D Materials
2d Materials, 8, 1-8
2D Materials
The structure and mobility of dislocations in the layered semiconductor InSe is studied within a multiscale approach based on generalized Peierls--Nabarro model with material-specific parametrization derived from first principles. The plasticity of I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e869fcc49237ef4dd33f6e25003557c2
Autor:
Amjad Al Taleb, Daniel Farías, Danil W. Boukhvalov, Valentina Paolucci, Francesca Genuzio, Carlo Cantalini, Tevfik Onur Menteş, Chin-Shan Lue, Gianluca D'Olimpio, Piero Torelli, Chia Nung Kuo, Andrea Locatelli, Antonio Politano
Publikováno v:
Journal of Physical Chemistry Letters
The Journal of Physical Chemistry Letters
The Journal of Physical Chemistry Letters
Tin diselenide (SnSe2) is a van der Waals semiconductor, which spontaneously forms a subnanometric SnO2 skin once exposed to air. Here, by means of surface-science spectroscopies and density functional theory, we have investigated the charge redistri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3cee730db5c1f8472159899f30891da6
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85094671576&doi=10.1021/acs.jpclett.0c02616&partnerID=40&md5=61bb998ef9ec9e13c7e212299fd95797
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85094671576&doi=10.1021/acs.jpclett.0c02616&partnerID=40&md5=61bb998ef9ec9e13c7e212299fd95797
Publikováno v:
Biblos-e Archivo. Repositorio Institucional de la UAM
instname
Repositorio Institucional del Instituto Madrileño de Estudios Avanzados en Nanociencia
instname
Repositorio Institucional del Instituto Madrileño de Estudios Avanzados en Nanociencia
This is an author-created, un-copyedited version of an article published in 2D Materials. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is ava
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70bc79f5c1d3cfd109bcf7b3be5dce02
https://doi.org/10.1088/2053-1583/ab0113
https://doi.org/10.1088/2053-1583/ab0113
Publikováno v:
Journal of Physical Chemistry C
Recent studies have shown that arsenic can form single-layer phases in buckled honeycomb as well as symmetric washboard structures, named as arsenene. These structures are stable even in freestanding form and are nonmagnetic semiconductors in the ene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d6705e7fc21a617db095f839e8f1e613
https://doi.org/10.1021/acs.jpcc.6b02439
https://doi.org/10.1021/acs.jpcc.6b02439
Autor:
Csilla Gergely, Caroline Vigreux, Béla Varga, Marta Martin-Fernandez, Raphaël Escalier, Bruno Robert, Ryad Bendoula
Publikováno v:
21st International Conference on Transparent Optical Networks, ICTON 2019
21st International Conference on Transparent Optical Networks, ICTON 2019, Jul 2019, Angers, France. IEEE, 2019, ⟨10.1109/ICTON.2019.8840343⟩
21st International Conference on Transparent Optical Networks, ICTON 2019, Jul 2019, Angers, France. 2019, ⟨10.1109/ICTON.2019.8840343⟩
ICTON
21st International Conference on Transparent Optical Networks, ICTON 2019, Jul 2019, Angers, France. IEEE, 2019, ⟨10.1109/ICTON.2019.8840343⟩
21st International Conference on Transparent Optical Networks, ICTON 2019, Jul 2019, Angers, France. 2019, ⟨10.1109/ICTON.2019.8840343⟩
ICTON
International audience; Functionalizing the surface of chalcogenide films is of major interest due to the wide use of these materials in infrared integrated optics. A functionalization route via short peptides that has been already used for silicon,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::afb3d3deb880939bf99ec72dd42d5e79
https://hal.inrae.fr/hal-02609785
https://hal.inrae.fr/hal-02609785
Autor:
Jüri Krustok, Ian Forbes, M. V. Yakushev, O. M. Borodavchenko, V. D. Zhivulko, Robert W. Martin, J. Márquez-Prieto, M. A. Sulimov, M. V. Kuznetsov, A. V. Mudryi, Ekaterina Skidchenko, Paul R. Edwards
Publikováno v:
J. Vac. Sci. Technol. B. Nanotechnol. microelectron.
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Cu2ZnSnSe4 (CZTSe) is a semiconductor used as the absorber layer in highly promising sustainable thin film solar cells. The authors study the effect of Ar+ etching of copper deficient and zinc excess CZTSe thin films deposited on Mo/glass substrates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ee1aa30be4b85488cd23ade90c0c61d
Autor:
Xvsheng Qiao, Hongli Ma, Xianghua Zhang, Zhuanghao Zheng, Xianping Fan, Michel Cathelinaud, Shuo Chen
Publikováno v:
Journal of Materials Chemistry C
Journal of Materials Chemistry C, 2018, 6 (24), pp.6465-6470. ⟨10.1039/c8tc01683f⟩
Journal of Materials Chemistry C, Royal Society of Chemistry, 2018, 6 (24), pp.6465-6470. ⟨10.1039/c8tc01683f⟩
Journal of Materials Chemistry C, 2018, 6 (24), pp.6465-6470. ⟨10.1039/c8tc01683f⟩
Journal of Materials Chemistry C, Royal Society of Chemistry, 2018, 6 (24), pp.6465-6470. ⟨10.1039/c8tc01683f⟩
Sb2Se3 is a highly interesting semiconductor with high absorption coefficient in the visible range and is composed of non-toxic and earth-abundant elements. To overcome the challenge of intrinsic low electrical conductivity of Sb2Se3 crystals, tin-do
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3728234504d2a5b45bf7c9593a44ddcc
https://univ-rennes.hal.science/hal-01835068
https://univ-rennes.hal.science/hal-01835068
Autor:
Shuo Chen, Xue Luo, Xuemei Liu, Xianghua Zhang, Xianping Fan, Yang Xu, Khurram Shehzad, Yuting Zhang, Xvsheng Qiao
Publikováno v:
Journal of Materials Chemistry C
Journal of Materials Chemistry C, 2018, 6 (41), pp.11078-11085. ⟨10.1039/c8tc03834a⟩
Journal of Materials Chemistry C, Royal Society of Chemistry, 2018, 6 (41), pp.11078-11085. ⟨10.1039/c8tc03834a⟩
Journal of Materials Chemistry C, 2018, 6 (41), pp.11078-11085. ⟨10.1039/c8tc03834a⟩
Journal of Materials Chemistry C, Royal Society of Chemistry, 2018, 6 (41), pp.11078-11085. ⟨10.1039/c8tc03834a⟩
International audience; Sb2Se3 is a highly interesting narrow band gap semiconductor with promising applications in new-generation electronic and photoelectronic devices. However, it has intrinsically low electrical conductivity, which limits its bro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c851e9bb94e692aead496a2761a4c572
https://univ-rennes.hal.science/hal-01939061
https://univ-rennes.hal.science/hal-01939061
Autor:
U.V. Varadaraju, V. S. Pavan Kumar
Publikováno v:
Journal of Solid State Chemistry. 212:64-68
Synthesis and high temperature transport properties of NaCu1+xMn1-xSe2, (x=0-0.75) a new quaternary layered selenide, are reported. NaCuMnSe2 crystallizes in a trigonal unit cell with space group of P-3m1 (a=4.1276 �, c=7.1253 �). The isovalent s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c1e6737807ee504b3128b91d19bd2368
https://doi.org/10.1016/j.jssc.2014.01.016
https://doi.org/10.1016/j.jssc.2014.01.016