Defect Passivation With Fluorine and Interface Engineering for Hf-Based High-κ/Metal Gate Stack Device Reliability and Performance Enhancement.

Autor: Hsing-Huang Tseng, Tobin, Philip J., Kalpat, Sriram, Schaeffer, Jamie K., Ramón, Michael E., Fonseca, Leonardo R. C., Jiang, Zhixiong X., Hegde, R. I., Triyoso, Dina H., Semavedam, S.

Publikováno v: IEEE Transactions on Electron Devices; Dec2007, Vol. 54 Issue 12, p3267-3275, 9p, 7 Black and White Photographs, 24 Graphs