Communicating with the dead in an Australian Aboriginal culture: the Tiwi from Melville and Bathurst Islands

Autor: Venbrux, H.J.M., Selin, H., Rakoff, R.M.

Publikováno v: Selin, H.; Rakoff, R.M. (ed.), Death Across Cultures: Death and Dying in Non-Western Cultures, pp. 317-333
Death Across Cultures ISBN: 9783030188252
Science Across Cultures ; 9, 317-333. Cham : Springer
STARTPAGE=317;ENDPAGE=333;TITLE=Science Across Cultures ; 9

The interaction between the living and the dead takes a prominent position in Tiwi society and culture. The dead need the living for a safe passage to the world of the dead, whereas the living need the dead to sustain life. The dead see to it that th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9fb9760ed539e21cede30ca2a66efe05
https://hdl.handle.net/2066/206394

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Si-nanowire CMOS inverter logic fabricated using gate-all-around (GAA) devices and top-down approach

Autor: K.D. Buddharaju, Selin H. G. Teo, Navab Singh, N. Balasubramanian, S.C. Rustagi, Dim-Lee Kwong, Guo-Qiang Lo

Publikováno v: Solid-State Electronics. 52:1312-1317

We present the monolithic integration of gate-all-around (GAA) Si-nanowire FETs into CMOS logic using top-down approach. Inverters are chosen as the test vehicles for demonstration. Empirically optimized designs show sharp ON–OFF transitions with h

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9875e18b5d24c5fc45f0f3742a23c69f
https://doi.org/10.1016/j.sse.2008.04.017

CMOS Inverter Based on Gate-All-Around Silicon-Nanowire MOSFETs Fabricated Using Top-Down Approach

Autor: N. Balasubramanian, K.D. Buddharaju, Dim-Lee Kwong, S. R. Omampuliyur, C.H. Tung, Selin H. G. Teo, Navab Singh, Guo-Qiang Lo, Wei-Wei Fang, S.C. Rustagi

Publikováno v: IEEE Electron Device Letters. 28:1021-1024

This letter demonstrates, for the first time, the integration of gate-all-around (GAA) Si-nanowire transistors into CMOS inverters using top-down approach. With matching of the drive currents of n- and p-MOSFETs using different gate lengths to achiev

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::22bacd250e997856af6aeca69b4e33b6
https://doi.org/10.1109/led.2007.906622